Laurence Marchini, Editor, writes:
We see from your search that you're looking for information on the term "Gallium arsenide",
and we have a large number of manufacturers' news releases and technical articles here on Electronicstalk which will be of interest.
Let me be your guide.
Start with
the news release Digital optocouplers have industrial specs from
Avago Technologies, which we summarised at the time by saying "Wide temperature optocouplers are extremely reliable and ideal for use in applications that operate in harsh industrial environments".
A few weeks before,
we featured the news release IC receiver handles 4.5 to 10.5GHz frequency bands from
Mimix Broadband: "The XR1011-QH integrates an image reject mixer, an LO buffer amplifier and a low-noise amplifier within a fully moulded 4 x 4mm QFN package".
In July 2007, we covered the news from Toshiba Electronics Europe
concerning its TLP3082
- take a look at Photocouplers enhance white goods safety
which says: "Power triac photocoupler has reinforced insulation and boasts 5kV isolation voltage for AC safety applications".
Take a look also at the news release from ON Semiconductor, Copper process upgrades passives performance,
as well as Amp buffers wide-bandwidth applications from Mimix Broadband,
and Broadband transmitter chip integrates more from Mimix Broadband.
See also:
Wireless applications continue growth for GaAs
(May 2007)
Five year forecast predicts that the GaAs market will enjoy a CAAGR of 12%, growing from US $3 billion in 2006 to over $5 billion by 2011
Power amplifier provides variable gain
(April 2007)
Gallium arsenide MMIC three-stage power amplifier features an on-chip temperature compensated output detector
Gallium Arsenide doubler with 25dBm output power
(March 2007)
An 18 to 21/36 to 42GHz GaAs pHEMT active doubler comes in a 7x7mm surface mount QFN package and is RoHS compliant
Buffer amps provide broadband operation
(March 2007)
Buffer amplifiers are ideal for wireless communications applications such as millimetre-wave point-to-point radio, local multipoint distribution services, satcom and Vsat applications
Emitters and detectors provide design flexibility
(February 2007)
IR emitters and detectors can be used in devices such as smoke detectors, IR spotlights for cameras, and remote control devices
Complex MBE system demonstrates expertise
(February 2007)
Oxford Instruments has delivered a twin V100 molecular beam epitaxy system to a prestigious customer in Asia
Receiver and transmitter upgrade microwave radio
(December 2006)
Mimix Broadband has released SMT-packaged gallium arsenide monolithic microwave integrated circuit subharmonically pumped receiver and transmitter devices
Packaged amplifier achieves 2dB noise figure
(December 2006)
Mimix Broadband is introducing a 3.5 to 8 GHz gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) low noise amplifier, packaged in an RoHS compliant QFN package
Power amplifier package survives Martian duties
(November 2006)
One of StratEdge's SE20 power amplifier packages is playing a key role in transmitting signals with information gathered from Mars Exploration Rovers Spirit and Opportunity back to earth
Receiver promises minimal distortion
(November 2006)
SMT packaged GaAs MMIC receiver combines a three stage LNA followed by a single transistor 'Tee' attenuator and an image reject fundamental resistive mixer
Arsenic source speeds MBE growth
(November 2006)
The new ECellAs valved arsenic effusion source or 'cracker cell' for molecular beam epitaxy is designed for high performance MBE growth of arsenic-containing III-V materials
MMIC driver amplifier saves board space
(October 2006)
A 5 to 14GHz gallium arsenide driver amplifier is packaged in an RoHS compliant QFN package
MMIC transmitters run from 10 to 45GHz
(October 2006)
Gallium arsenide MMIC transmitters come in RoHS-compliant, surface mount technology packages, covering 10 to 45GHz
Receivers come in surface-mount packages
(September 2006)
Gallium arsenide monolithic microwave integrated circuit receivers in RoHS-compliant, surface mount technology packages cover 11 to 45GHz
GaN transistor raises basestation power density
(August 2006)
A compact GaN power transistor amplifier boasts the world's highest output power level of 400W while featuring low distortion characteristics for 3G basestations
Amp has on-chip gain and power control
(August 2006)
A gallium arsenide monolithic microwave integrated circuit four stage power amplifier comes with the unique feature of output power adjustment
Three stage balanced GaAs MMIC power amplifier
(July 2006)
Mimix Broadband introduces three-stage balanced GaAs MMIC power amplifier and complementary driver amplifier at 43.5 to 46GHz
Chipset cuts costs for X-band radar
(May 2006)
A new gallium arsenide chipset for X-band radar applications offers higher power and higher integration for superior performance at a reasonable price
Power amplifier suppliers fight for market share
(May 2006)
Four handset power amplifier suppliers below the top three gained share in 2005, according to findings in the recent Strategy Analytics report
Increased handset complexity fuels GaAs demand
(April 2006)
The annual five year outlook for the GaAs industry predicts demand for bulk and epitaxial substrates will grow by 30 to 40% over 2006 and 2007, effectively doubling by 2008
GaAs device demand spreads from the handset
(April 2006)
GaAs device revenues will grow by 36% over 2005 to 2010, breaking the $3 billion barrier in 2006
Universal Semiconductor Technology buys foundry
(April 2006)
Mimix Broadband is selling its gallium arsenide foundry to Universal Semiconductor Technology
Active doubler delivers constant power
(March 2006)
Mimix Broadband has released a 7.5-22.5/15.0-45.0GHz active doubler offered in a 3 x 3mm QFN surface mount plastic package that is RoHS compliant
Power amplifier is optimised for linear operation
(February 2006)
A new gallium arsenide monolithic microwave integrated circuit power amplifier is optimised for linear operation
Novel materials unite GaAs and MOSFET technologies
(January 2006)
A breakthrough device combines the high performance of GaAs semiconductor compounds with the advantages of traditional MOSFET technology and its scaling laws
Low noise amplifiers run from 5 to 45GHz
(January 2006)
An expanded product line of gallium arsenide MMIC low noise amplifiers cover the 5 to 45GHz frequency bands
High-power IR emitters improve transmission range
(January 2006)
A new family of high-power infra-red LED emitters with 870 and 940nm wavelengths are optimised for high radiant intensity, speed and low forward voltage
Reports analyse automotive blindspot monitoring
(January 2006)
Two reports analysing the market for automotive blindspot monitoring systems forecast that this market will grow to nearly 4 million units by 2012
Power amp integrates compensated detector
(December 2005)
A new gallium arsenide MMIC two-stage high power amplifier from Mimix Broadband integrates an on-chip temperature compensated output power detector
Novel technique improves optical coupling
(November 2005)
Molex and KiloLambda Technologies have developed an improved method of coupling light between optical fibres and silicon waveguides
Low cost buffer amp fits Ku-band applications
(October 2005)
Mimix Broadband has developed a gallium arsenide (GaAs) three stage driver amplifier with a self-biased, single supply design
Chipset cuts transceivers down to three devices
(October 2005)
A new GaAs MMIC 13/15GHz chipset combines a highly integrated image reject receiver and transmitter with a compact two-stage power amplifier
Low noise gain block covers 2-18GHz bands
(September 2005)
Available now from Mimix Broadband is a new gallium arsenide (GaAs) two-stage low-noise gain block amplifier that has a self-biased, single supply design
Ku-band power amp comes in plastic package
(August 2005)
Mimix Broadband has a new Ku-band gallium arsenide (GaAs) power amplifier module (PAM) offered in a low-cost 4 x 4mm, plastic QFN package