Laurence Marchini, Editor, writes:
We see from your search that you're looking for information on the term "MESFET",
and we have a large number of manufacturers' news releases and technical articles here on Electronicstalk which will be of interest.
Let me be your guide.
Start with
the news release Complex MBE system demonstrates expertise from
Oxford Instruments Plasma Technology, which we summarised at the time by saying "Oxford Instruments has delivered a twin V100 molecular beam epitaxy system to a prestigious customer in Asia".
Several months prior to that,
we featured the news release Digital attenuators promise fine resolution from
Link Microtek: "A family of GaAs MMIC digital attenuators offer resolutions down to 0.25dB, together with high linearity, excellent accuracy and RoHS compliance".
In March 2006, we covered the news from Maxim Integrated Products
concerning its MAX11014 and MAX11015
- take a look at ICs take control of basestation MESFETs
which says: "The MAX11014 and MAX11015 devices set and control bias conditions for dual MESFET power devices found in point-to-point communication and other microwave basestations".
Take a look also at the news release from Aspen Electronics, Oscillators promise high-reliability comms,
as well as Digital attenuators deliver 0.25 dB resolution from MRC Components,
and Report details growth of SiC microelectronics from WTC Wicht Technologie Consulting.
See also:
Microwave mixers are all RoHS compliant
(July 2005)
Hittite Microwave Corp has two new SMT GaAs MMIC I/Q mixers and a new SMT GaAs MMIC double balanced mixer for Vsat, microwave radio, test equipment and sensor applications from 4 to 16GHz
Power amps target Wi-Fi and WiMAX basestations
(May 2005)
Microwave Technology has released two high linearity power amplifier (PA) products for 802.11 Wi-Fi and emerging 802.16 WiMAX basestation applications
Mixers target radio, test and sensor applications
(February 2005)
Hittite Microwave Corp has six new MMIC I/Q mixer dice and two SMT MMIC I/Q mixers that cover an RF/LO frequency range of 4 to 32GHz
MESFET switch suits multiband antennas
(December 2004)
A new industry-leading small, low-profile GaAs MESFET SPDT switch aims for use in multiband/multimode cellular antenna switch modules, Bluetooth modules and WLAN applications
Design kit supports triple-metal GaAs process
(April 2004)
A new process design kit (PDK) supports TriQuint's 0.6-micron MESFET three-metal-interconnect gallium arsenide (GaAs) IC process, TQTRx, for use with Ansoft Designer v2
TriQuint moves into pHEMTs
(February 2004)
TriQuint Semiconductor has introduced the high-volume TQPED pHEMT process at its 150mm Oregon wafer manufacturing facility
6in process boosts GaAs yields
(June 2003)
Bookham Technology has launched one of the first European-based commercial processes to use 6in GaAs wafer technology
MMIC design libraries work with latest software
(April 2003)
Bookham Technology has migrated its MMIC model and design libraries to the latest release of Agilent Technologies' industry-leading Advanced Design System software - ADS 2003A
Leadless FET improves basestation performance
(November 2002)
Agilent Technologies has developed a miniature enhancement-mode pseudomorphic high electron mobility FET that combines exceptional RF performance, power efficiency and reliability
GaAs MMIC range shows up in Milan
(September 2002)
Bookham Technology will launch a portfolio of GaAs MMICs and foundry services at the European Microwave Week 2002, to be held from 24th to 26th September in Milan, Italy
Characterisation links with modelling
(February 2002)
A new software driver allows users to combine the Keithley Model 4200-SCS semiconductor characterisation system with Agilent Technologies' IC-CAP device modelling software environment