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"MOSFET technology"...

Laurence Marchini

Laurence Marchini, Editor, writes:
 

We see from your search that you're looking for information on the term "MOSFET technology", and we have a large number of manufacturers' news releases and technical articles here on Electronicstalk which will be of interest. Let me be your guide.
 
Start with the news release Relays upgrade industry standard specs from Isocom Components 2004, which we summarised at the time by saying "MOSFET relays in SMD and DIL packages are fully compatible with industry standard devices from CP Clare, Aromat, Cosmo, NEC and Toshiba". A few weeks before, we featured the news release Dual power MOSFET is speedy switcher from First Components: "KEC, the largest manufacturer of discrete electronic components in Korea, has announced a 4.8A dual power MOSFET in an SO-8 surface mount package".
 
In August 2006, we covered the news from International Rectifier concerning its IRF6631/IRF6638 chipset - take a look at Chipset cuts power drain in mid-range convertors which says: "A new DirectFET chipset is an excellent choice for designers seeking very compact and efficient switching in mid-range, 15-18A power convertor applications".
 
Take a look also at the news release from Isocom Components 2004, Optically coupled relays boast high isolation, as well as Licence provides Korean source for trench MOSFETs from Vishay Siliconix, and Novel materials unite GaAs and MOSFET technologies from Freescale Semiconductor.
 

See also:

FM transmitter family covers TV and radio (January 2006)
The R and S NR8200 family of VHF FM transmitters are based on a common platform for TV and sound broadcast transmitters, covering a power range from 2.5 to 30kW

Radio modules specialise in switching signals (September 2005)
The CDT-TX-01 transmitter and CDT-RX-01 receiver modules are specially designed for applications requiring wireless transmission of switching signals

MOSFETs stay cool in plasma displays (January 2005)
A new family of power MOSFETs have been designed into Samsung plasma display panels, including the largest PDP TV ever built with a diagonal viewing dimension of 102in

Hybrid transistor boasts the best of both worlds (December 2004)
A new hybrid emitter-switched bipolar transistor is designed for use in welding equipment, induction heating systems and power factor correction for audio amplifiers

Chip-scale MOSFETs aim for battery-pack duties (August 2004)
Two new common-drain, chip-scale power MOSFETs are billed as are the industry's first such P-channel and 30V N-channel devices

Licence to proliferate BGA power packaging (March 2004)
Fairchild Semiconductor has licensed Gem Services to offer one of Fairchild's most advanced MOSFET packaging technologies as open tooling for the power semiconductor market

Novel bipolar technology cuts saturation voltage (January 2004)
A new generation of bipolar transistors from Zetex offers a 30% improvement in saturation voltage compared with previous generations

MOSFET features submilliohm on-state resistance (November 2003)
A new sub-1mohm MOSFET demonstrates a significant reduction of approximately 40% in on-state resistance for MOSFETs compared with conventionally packaged products

Novel MOSFETs promise to boost DC/DC performance (July 2003)
A new range of power MOSFETs uses a breakthrough TrenchFET technology to combine greatly reduced switching losses with ultralow on-resistance

Upgrade for lead-free convertors (February 2003)
Ericsson Power Modules is upgrading its PKD series of lead-free DC/DC convertors to lead-free assembly processes

40V MOSFET takes on larger automotive tasks (November 2002)
International Rectifier has developed new automotive HEXFET power MOSFET technology it reckons combines high efficiency with excellent ruggedness

High-speed power MOSFET for portable designs (October 2002)
The latest miniature low-voltage power MOSFET from Toshiba is a high-speed, high-efficiency device that combines an ultra-low on-resistance of 10.3mohm with a maximum leakage current of only -10uA

MOSFETs boost hot-swap convertor efficiency (August 2002)
New from International Rectifier at Electronica will be a line of 150 and 200V MOSFETs that can increase total efficiency by 1% in isolated DC/DC convertors

MOSFETs take on automotive applications (May 2002)
Fairchild Semiconductor has successfully qualified its line of new medium-voltage (60-150V) UltraFET trench MOSFET technology for automotive applications

P-channel trench MOSFETs on the way (May 2002)
The Zetex advanced trench MOSFET process is set to yield its first P-channel devices during the second quarter of 2002

MOSFETs combine performance and value (March 2002)
Additions to Fairchild Semiconductor's growing portfolio of 30V N-channel PowerTrench MOSFETs provide optimised combined high-side/low-side switch efficiency in synchronous rectifier designs

Brochure aids MOSFET specification (October 2001)
The Toshiba power MOSFET 2001 brochure combines in-depth information on MOSFET products and packages with an easy-to-use selection matrix for rapid identification of the best devices

Smaller MOSFETs deliver standard performance (August 2001)
Fairchild Semiconductor reckons the first of its new generation of PowerTrench N-channel MOSFETs is substantially smaller than competing devices

Power chipset optimises Class D power amps (June 2001)
New from International Rectifier, IRCS-Series power semiconductor chipsets are optimised for the Crystal CS44210 TrueDigital Class D power amplifier controller IC from Cirrus Logic

P-channel MOSFETs handle higher input voltages (June 2001)
New 30V P-channel PowerTrench MOSFET technology from Fairchild Semiconductor features enhanced rugged-gate technology with 25V gate-to-source maximum rating

MOSFET module has built-in temperature sensors (March 2001)
The MG400A2YM60 silicon N-channel power MOSFET module from Toshiba incorporates both a thermistor to detect case temperature and an integrated thermal sensor diode to monitor die temperature

 

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