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Discrete Power Devices
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Fast-recovery MOSFETs slash on-resistance
A 600V N-channel MOSFET claims the industry's best on-resistance of 60mohm for fast-recovery MOSFETs in the standard TO-247 package.
News from STMicroelectronics ( 7 May 2008)
Novel architecture offers transistor breakthrough
The world's first high-frequency high-voltage vertical field effect transistors deliver increased bandwidth, voltage and power levels to radar and avionic applications.
News from HVVi Semiconductors ( 1 May 2008)
Dual MOSFETs save space in portable kit
With a low vertical clearance of 0.5mm, the new SOT-963 packaged NTUD312x devices satisfy the requirements of the new generation ultrathin handheld portable devices.
News from ON Semiconductor (17 April 2008)
RF transistor is ready for TV switchover
The latest addition to Freescale's family of RF power LDMOS transistors is designed for TV transmitters employing both analogue and digital modulation formats.
News from Freescale Semiconductor (15 April 2008)
Low-profile MOSFETs cut on-resistance
Typical applications include load switching and battery protection in portable devices such as cellphones, PDAs, digital cameras, MP3 players and smart phones.
News from Vishay Siliconix (10 April 2008)
High-power transistors take to the air
Microsemi transistors incorporate an internal pre-match, which enables them to deliver the best possible performance over their entire operating frequency range.
News from Link Microtek ( 1 April 2008)
Power portfolio kicks off with MOSFETs
MOSFETs are designed for use in lithium ion battery packs and battery modules of mobile handsets.
News from MagnaChip Semiconductor (31 March 2008)
MOSFET's merit means lower losses
N-channel power MOSFET claims record-breaking specifications for on-resistance and figure of merit.
News from Vishay Siliconix (27 March 2008)
Efficiency gain for IGBTs
Field stop structure and avalanche-rugged trench gate technology combine to offer optimal tradeoffs between conduction losses and switching losses.
News from Fairchild Semiconductor (19 March 2008)
MOSFET squeezes into tiny package
Zetex Semiconductors' ZXMN2F34MA suits space-starved switching and power management applications, such as external switches in buck/boost PoL convertors.
News from Zetex ( 6 March 2008)
IGBTs reduce power dissipation for UPS systems
Application-specific devices use IR's latest-generation field stop trench technology to reduce conduction and switching losses.
News from International Rectifier ( 6 March 2008)
Transistors support wide bandwidths
SiC MESFETs are optimised for applications such as wideband military communications, secure communications, Class A and A/B amplifiers, TDMA, EDGE, CDMA, W-CDMA broadband amplifiers and WiMAX.
News from Digi-Key Corporation ( 5 March 2008)
Smaller outline for discrete transistors
MOSFETs deliver power dissipation and performance comparable to SOT23 but occupy only 14% of the printed circuit board space.
News from NXP Semiconductors (26 February 2008)
Triacs maintain performance up to 150C
Devices enable the use of considerably smaller heatsinks, and also allow the end product to benefit from more reliable operation in hot environments.
News from STMicroelectronics (22 February 2008)
MOSFETs cut on-resistance and gate charge
STripFET technology makes use of very high equivalent cell density and smaller cell features to achieve extremely low on-resistance and losses, while using less silicon area.
News from STMicroelectronics (21 February 2008)
MOSFETs cut on resistance and gate charge
Power MOSFET devices optimise DC/DC conversion and reduce power losses at critical current levels.
News from ON Semiconductor (18 February 2008)
P-channel MOSFET has negative attributes
The FDD4141 offers low on-resistance and 50% lower gate charge compared with current generation MOSFETs.
News from Fairchild Semiconductor (15 February 2008)
MOSFETs boost DC/DC convertor efficiency
High-speed switching MOSFETs provide higher drain current and lower on-state resistance, combined with the power efficiency advantages of the UMOS V-H Series.
News from Toshiba Electronics Europe (18 January 2008)
Power MOSFET meets automotive challenges
Advanced architecture and advanced package manage heat dissipation and reduce power loss with a maximum on-resistance of 1.5mohm.
News from NEC Electronics (Europe) (17 January 2008)
GaN transistor beats breakdown record
Breakdown voltage is more than 5x higher than previously reported highest values in GaN power transistors.
News from Panasonic Industrial Europe ( 9 January 2008)
Distribution deal extends to full line
Digi-Key now carries the full range of Vishay semiconductor and passive components.
News from Digi-Key Corporation (20 December 2007)
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