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Discrete Power Devices

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Latest articles from 'Discrete Power Devices'

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Showing 1-25 of 417 articles

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SKiiP4 power module launched by Semikron

Semikron has introduced SKiiP4, a range of intelligent IGBT power modules that offers a longer service life than non-sintered modules and can be used in higher-temperature applications.

News from Semikron, May 21, 2009

IGBTs provide alternative to solder connections

Infineon Technologies AG introduced the Smart range of IGBT (Insulated Gate Bipolar Transistor) modules at the PCIM 2009 Exhibition and Congress in Nuremberg.

News from Infineon Technologies, May 20, 2009

IGBT power modules offer extended service life

Skiip4, the latest IGBT intelligent power module (IPM) from Semikron, is designed to offer a longer service life than non-sintered modules and can be used in higher temperature applications.

News from Semikron, May 20, 2009

Diodes offers DFN-format dual-device combinations

Diodes Incorporated has introduced dual-device combinations in thermally efficient ultra-small DFN packaging for charging and switching applications in portable devices.

News from Diodes Incorporated, May 4, 2009

IR unveils family of logic-level Mosfets

International Rectifier (IR) has introduced a range of logic-level gate drive trench Hexfet-power Mosfets.

News from International Rectifier, May 4, 2009

Fairchild unveils small P-channel Microfet Mosfet

Fairchild Semiconductor has introduced a 20V 2mm x 2mm x 0.55mm thin Microfet Mosfet, which provides low RDS(ON), for designers of portable applications.

News from Fairchild Semiconductor, Apr 23, 2009

DMTL offers Leadsun high-voltage diodes

Very-high-voltage diodes from Leadsun Electronics are now available from DMTL.

News from DMTL, Apr 3, 2009

Cissoid introduces CMT-74XX logic series

Cissoid, a provider of high-temperature semiconductor solutions, has unveiled a suite of logic products that sustain a temperature range of -55C to +175C.

News from Cissoid, Mar 16, 2009

Cissoid presents converter reference design

Cissoid has unveiled Etna, a DC/DC converter reference design suitable for operation from -55C up to +225C.

News from Cissoid, Jan 27, 2009

Trenchfet power Mosfets give low on-resistance

Vishay Intertechnology has released 20V and 30V p-channel Trenchfet power Mosfets, featuring a +/-20V gate source voltage and low on-resistance, in the SO-8 footprint.

News from Vishay Siliconix, Dec 24, 2008

Vishay Mosfet has Schottky diode

Vishay Intertechnology has announced a tiny 20V n-channel power Mosfet plus Schottky diode.

News from Vishay Siliconix, Dec 16, 2008

Cissoid announces high temperature bridge driver

Cissoid has announced the release of a high temperature full bridge driver guaranteed for operation between -55C and +225C.

News from Cissoid, Dec 15, 2008

Interfet offers discontinued JFET devices

Interfet Corp offers a second source supply for many discontinued junction field effect transistor devices (JFET).

News from Rhopoint Components, Nov 5, 2008

Linear reveals current sense amplifier

Linear Technology has announced the LT6107, a military-plastic-grade (MP-grade) high-side current sense amplifier specified for operation from -55 to 150C.

News from Linear Technology Corp, Nov 3, 2008

MagnaChip launches N-P Multi-Chip MOSFET series

MagnaChip Semiconductor has announced the launch of its MOSFET series for use in backlight units of LCD TVs and LCD monitors.

News from MagnaChip Semiconductor, Sep 2, 2008

LDMOS technology aids UHF transmitter efficiency

Freescale's laterally diffused MOS UHF technology will enable Harris to produce its most compact and power-efficient UHF transmitters.

News from Freescale Semiconductor, Aug 28, 2008

Small signal MOSFETs run from 1.2V supplies

Devices operate with a gate drive voltage of just 1.2V, and so are ideally suited to high-speed and analogue switching in portable battery-powered equipment.

News from Toshiba Electronics Europe, Aug 27, 2008

Power MOSFETs offer lower on-resistance

P-channel power MOSFET family in PowerPAK SC-75 packages includes several devices rated from 8 to 30V that are industry firsts for their voltage ratings in this package type.

News from Vishay Siliconix, Aug 21, 2008

Triacs come in isolated packages

Latest triacs are ideal for industrial and control applications where isolation voltage is critical and safety is a primary concern.

News from ON Semiconductor, Aug 15, 2008

Transistors and diodes come in smaller packages

Smaller low-profile packages allow design engineers to use them in such applications as mobile handsets.

News from ON Semiconductor, Aug 8, 2008

Two MOSFETs in one boost PSU efficiency

Device incorporates power MOSFETs of two different types, composing a synchronous rectification DC/DC convertor in a high-thermal-radiation package measuring 5.1 x 6.1 x 0.8mm.

News from Renesas Technology Europe, Jul 31, 2008

High-current MOSFET raises power efficiency

High current rating allows engineers to design-out multiple parallel MOSFETs to save board space and BOM costs.

News from STMicroelectronics, Jul 17, 2008

Bipolar junction transistors improve audio

Extended beta improves linearity and reduces total harmonic distortion, improving the fidelity and overall sound of audio products.

News from Fairchild Semiconductor, Jul 3, 2008

MOSFETs aim to reduce power consumption

Devices are particularly suited for the power supply topology of a VGA card, contributing to the higher efficiency of buck topology.

News from MagnaChip Semiconductor, Jun 30, 2008

Diode networks are custom applications

Networks offer new levels of performance for product applications where flexible high density space-saving configurations are required to address signal integrity issues.

News from BI Technologies Electronic Components Division, Jun 25, 2008

Showing 1-25 of 417 articles