Discrete Power Devices

Archive page 18 of 18

Our RSS feed for Discrete Power Devices press releases

FRFETs improve diode reverse recovery

Fairchild Semiconductor has a new family of 500V fast-recovery MOSFETs designed to provide significant performance enhancements in telecomms and server power system designs.

News from Fairchild Semiconductor (21 June 2001)

ESD-protected MOSFETs keep a low profile

Toshiba Electronics has used its latest trench semiconductor technology to produce high-current, ESD-protected single and dual MOSFET devices in the industry's lowest profile packaging.

News from Toshiba Electronics Europe (21 June 2001)

Dynex can do IGBTs for Renault's hybrid Kangoo

Dynex Power has received a major production order from Groupe SAGEM to provide power semiconductor modules for Renault's new Kangoo all-electric and hybrid thermal-electric minivan.

News from Dynex Semiconductor (20 June 2001)

Bipolar junction transistors boost HDTV

Fairchild Semiconductor has released its next generation of horizontal deflection transistor (HDTR) products.

News from Fairchild Semiconductor (11 June 2001)

Fast-recovey diodes range up to 400V

International Rectifier has expanded its ultra-fast-recovery epitaxial diode (FRED) family to include 400V-rated devices.

News from International Rectifier ( 8 June 2001)

P-channel MOSFETs handle higher input voltages

New 30V P-channel PowerTrench MOSFET technology from Fairchild Semiconductor features enhanced rugged-gate technology with 25V gate-to-source maximum rating.

News from Fairchild Semiconductor ( 6 June 2001)

Dual packaging for Stealth soft recovery diodes

Fairchild Semiconductor has packaged its Stealth soft recovery diodes in pairs for improved efficiency with reduced space in switch mode power supplies.

News from Fairchild Semiconductor (30 May 2001)

Dynamic diode duo improve TV horizontal voltage

New from Fairchild Semiconductor, the FFPF60B150DS is a copackaged damper and modulation diode pair for improving horizontal voltage control in colour televisions and monitors.

News from Fairchild Semiconductor (15 May 2001)

Dual-channel MOSFET switches shrink USB power

New dual-channel MOSFET switches from Rohm Electronics combine SOP8 packaging with very low on resistances and are designed to save space and reduce component count in USB applications.

News from Rohm Electronics (UK) (26 April 2001)

Dual power MOSFET switches 25% faster

A semiconductor process that enables a threefold increase in cell density compared with previous technologies is behind a new generation of space-saving power MOSFETs from Toshiba.

News from Toshiba Electronics Europe (13 April 2001)

MOSFET is ready for high-voltage car batteries

The new FDB06AN08A1 UltraFET trench MOSFET from Fairchild Semiconductor is designed for 42V automotive battery applications requiring full device capability at low gate drive voltages.

News from Fairchild Semiconductor (12 April 2001)

Rad-hard MOSFETs protect and survive

With high radiation hardness and unparalleled single event effect (SEE) immunity, International Rectifier's new R5 MOSFETs are well suited for systems that must survive penetrating gamma rays.

News from International Rectifier ( 5 April 2001)

New package gives Schottky diodes lower profile

A new series of Schottky power diodes from Toshiba uses advanced M-Flat packaging to offer a footprint compatible with existing SMA devices, while reducing package height by more than 50%.

News from Toshiba Electronics Europe ( 4 April 2001)

MOSFETs improve power density on both sides

New from International Rectifier are two TO-220-packaged HEXFET power MOSFETs that maximise power density and performance in primary- and secondary-side DC/DC convertor circuits.

News from International Rectifier (20 March 2001)

Fast-recovery diode modules in ones and twos

Dynex Semiconductor announces the release of a new family of high-voltage fast-recovery diode (FRD) modules for use in applications including traction and industrial motor drives.

News from Dynex Semiconductor (19 March 2001)

MOSFETs improve 12V-input converter efficiency

Two new 20V HEXFET power MOSFET families from International Rectifier are designed to increase efficiency by up to 4% in 12V-input DC/DC convertors.

News from International Rectifier (16 March 2001)

Smaller IGBT package has 6000V isolation

Dynex Semiconductor has released a new compact IGBT module package designed for applications up to 3300V including traction auxiliaries and specialist motor drives.

News from Dynex Semiconductor (14 March 2001)

IGBT modules switch up to 400V

Toshiba Electronics Europe has expanded its Compact Standard Series of IGBT modules with the addition of three new 250V devices aimed at high-power switching and motor control.

News from Toshiba Electronics Europe ( 7 March 2001)

MOSFET module has built-in temperature sensors

The MG400A2YM60 silicon N-channel power MOSFET module from Toshiba incorporates both a thermistor to detect case temperature and an integrated thermal sensor diode to monitor die temperature.