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Discrete Power Devices
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Ultrafast recovery diodes for increased efficiency
International Rectifier has expanded its portfolio of hermetically sealed high-reliability FRED products with over 12 new 200V ultrafast recovery diodes with soft reverse recovery characteristics.
News from International Rectifier (29 November 2001)
Selection guide to discrete semis
Toshiba Electronics has launched a selection guide that will help European engineers to specify discrete, optoelectronic and power semiconductor products for their designs.
News from Toshiba Electronics Europe (13 November 2001)
Lower on-resistance for MOSFET saves space
Hitachi has a new P-channel power MOSFET that it says offers the industry's lowest on-resistance of 3.6mohm (typical), approximately 40% lower than Hitachi's previous model.
News from Hitachi Europe (31 October 2001)
Lower losses from speedy IGBT
A new IGBT from Toshiba combines a compact design with very high-speed and low switching loss operation and is targeted at high-frequency applications such as UPSs and motor drives.
News from Toshiba Electronics Europe (26 October 2001)
Dynex to produce modules for Ecostar
Dynex Semiconductor has entered into an agreement with Ecostar Electric Drive Systems to fabricate prototype power semiconductor modules for use in electric vehicles and power conversion systems.
News from Dynex Semiconductor (17 October 2001)
Silicon carbide diodes raise the voltage stakes
Designed for those applications where a conventional Schottky diode runs out of voltage headroom, the new UPSC range from Solid State Supplies can operate at up to 600V.
News from Solid State Supplies (17 October 2001)
IGBTs keep getting faster
Toshiba Electronics is developing a next generation of IGBT technology that will be aimed at higher-frequency applications ranging from UPSs to switch mode power supplies.
News from Toshiba Electronics Europe (15 October 2001)
Brochure aids MOSFET specification
The Toshiba power MOSFET 2001 brochure combines in-depth information on MOSFET products and packages with an easy-to-use selection matrix for rapid identification of the best devices.
News from Toshiba Electronics Europe (10 October 2001)
Low gate drive voltage lets IGBTs swap for MOSFETs
Fairchild Semiconductor has released its new generation of IGBTs designed to replace 500/600V MOSFETs in switch mode power supply, power factor correction and other high-power applications.
News from Fairchild Semiconductor ( 9 October 2001)
Schottky diodes improve reverse current losses
New Schottky barrier diodes (SBDs) from Shindengen address the improved output voltage requirements of today's AC adapters through dramatic improvements in reverse current.
News from Shindengen UK ( 3 October 2001)
Two MOSFETs are better in one package
International Rectifier has introduced the IRF5810 dual MOSFET in a TSOP-6 package which combines two P-channel HEXFET power MOSFETs into a single 1.3 x 2.9mm footprint.
News from International Rectifier (27 September 2001)
High-efficiency MOSFETs aim for backplane power
International Rectifier has expanded its family of SOIC-packaged HEXFET power MOSFETs to address the lowest power ranges found in backplane DC/DC convertors in telecomms and datacomms industries.
News from International Rectifier (20 September 2001)
300V diodes provide ideal performance for PSUs
International Rectifier has expanded its fast recovery epitaxial diode (FRED) family to include 300V ultrafast diodes.
News from International Rectifier ( 7 September 2001)
High-temperature MOSFET handles automotive stress
International Rectifier has introduced a HEXFET power MOSFET with a maximum temperature rating of 200C in a TO-220 plastic package.
News from International Rectifier (22 August 2001)
Low thermal resistance for high-power IGBTs
Dynex Semiconductor has released a new range of high-power 3300V IGBTs packaged in industry standard isolated module outlines.
News from Dynex Semiconductor (14 August 2001)
Smaller MOSFETs deliver standard performance
Fairchild Semiconductor reckons the first of its new generation of PowerTrench N-channel MOSFETs is substantially smaller than competing devices.
News from Fairchild Semiconductor (13 August 2001)
IGBTs optimised for high-volume appliance drives
International Rectifier has announced the expansion of its line of Co-Pack IGBTs with the new IRG4BC15UD, IRG4BC15UD-S and IRG4BC20UD-S devices.
News from International Rectifier ( 3 August 2001)
Low on-state resistance puts MOSFETs in ballasts
Fairchild Semiconductor has a new family of TO-92L-packaged N-channel MOSFETs designed to provide improved performance and lower cost than I-PAK MOSFETs in compact ballast applications.
News from Fairchild Semiconductor (19 July 2001)
Power switches cut losses in CRT designs
New from Fairchild Semiconductor is the FS6S series of highly integrated SMPS (switched-mode power supply) power switches for CRT monitor flyback power supplies.
News from Fairchild Semiconductor ( 9 July 2001)
Smallest packaged IGBT for automotive ignition
New from Fairchild Semiconductor, the EcoSpark family of IGBTs is designed for use as ignition coil drivers.
News from Fairchild Semiconductor (21 June 2001)
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