Latest news on Electronicstalk categorised by product type
Discrete Power Devices
Archive page 16 of 18
Our RSS feed for Discrete Power Devices press releases
MOSFETs take on automotive applications
Fairchild Semiconductor has successfully qualified its line of new medium-voltage (60-150V) UltraFET trench MOSFET technology for automotive applications.
News from Fairchild Semiconductor (17 May 2002)
P-channel trench MOSFETs on the way
The Zetex advanced trench MOSFET process is set to yield its first P-channel devices during the second quarter of 2002.
News from Zetex (13 May 2002)
Dual varactors ensure close matching
For applications needing close tuner diode matching, Zetex has released a pair of dual common-cathode hyperabrupt varactors.
News from Zetex (26 April 2002)
Guide simplifies MOSFET selection
Introduced to simplify MOSFET selection, a comprehensive new product guide from Zetex covers its complete range of N- and P-channel devices.
News from Zetex ( 3 April 2002)
Alstom supports Dynex independence
Alstom Transport has awarded a one year contract worth approximately GBP 1.5 million to Dynex Semiconductor.
News from Dynex Semiconductor (25 March 2002)
MOSFETs aim for 42V automotive applications
Designed for 42V automotive systems, International Rectifier says its latest 75V HEXFETs combine up to 10% lower on-resistance than previous devices with some of the best performance on the market.
News from International Rectifier (25 March 2002)
BGA-packaged MOSFETs save space and resistance
Fairchild has come out with 11 more high-performance small-footprint BGA-packaged MOSFETs, including single and common-drain dual devices in both N- and P-channel versions.
News from Fairchild Semiconductor (19 March 2002)
MOSFETs combine performance and value
Additions to Fairchild Semiconductor's growing portfolio of 30V N-channel PowerTrench MOSFETs provide optimised combined high-side/low-side switch efficiency in synchronous rectifier designs.
News from Fairchild Semiconductor (18 March 2002)
IGBT modules optimised for higher frequencies
At this year's PCIM show Toshiba Electronics will launch a new family of 1200V IGBT modules designed to meet the needs of applications with switching frequencies up to and beyond 50kHz.
News from Toshiba Electronics Europe ( 4 March 2002)
More I/O isolation from coplanar SSR design
Fairchild Semiconductor has a new line of optically coupled solid-state relays (SSRs).
News from Fairchild Semiconductor (25 February 2002)
Triac and diac trigger in one package
The new Alternistor Quadrac series from Solid State Supplies is the ideal alternative to the costly and time-consuming option of buying a discrete diac to assemble in conjunction with a gated triac.
News from Solid State Supplies (19 February 2002)
MOSFETs to give that home theatre sound
Zetex has launched a series of four N- and P-channel MOSFETs providing all the performance demanded by Class D audio systems.
News from Zetex ( 6 February 2002)
Faster-switching IGBTs save space and cut losses
Toshiba Electronics has released the first in a series of ultra fast switching (UFS) IGBTs that will save space and minimise losses in high-speed switching applications operating at up to 150kHz.
News from Toshiba Electronics Europe ( 4 February 2002)
IGBT and diode run cooler together for driving
International Rectifier's has a new family of 600V short-circuit-rated IGBT/FRED copackaged devices for sub-two-horsepower industrial and appliance motor drives.
News from International Rectifier (29 January 2002)
Low-loss Schottky diodes for DC/DC conversion
New low-forward-voltage compact SMD Schottky diodes from Shindengen provide secondary rectification in DC/DC convertor applications.
News from Shindengen UK (11 January 2002)
Transistor and diode together (again)
Rohm's new UML series of devices combines a general-purpose transistor and a Schottky barrier diode into a miniature UMT package.
News from Rohm Electronics (UK) ( 9 January 2002)
MOSFET and diode together save space and cost
International Rectifier has two new P-channel FETKY devices that combine a MOSFET and Schottky diode in a single SO-8 to reduce packaging cost and offer substantial space savings.
News from International Rectifier ( 9 January 2002)
Richardson adds bespoke edge to Dynex
Dynex Semiconductor has signed a global distribution agreement for its line of power semiconductors, including IGBTs, thyristors and diodes, with Richardson Electronics.
News from Dynex Semiconductor (21 December 2001)
MOSFETs optimised for high-speed switching
Rohm Electronics has expanded its family of high-efficiency, miniature power MOSFETs with new 30 and 60V devices that are optimised for high-speed switching.
News from Rohm Electronics (UK) (11 December 2001)
Shrinking power MOSFET switches
NEC Electronics has two new N-channel Semi-PowerMOSFET switches to meet the demand for power control in ever shrinking portable battery-powered devices.
News from NEC Electronics (Europe) (10 December 2001)
Earlier news from this category...
Latest news from this category...

