Discrete Power Devices

Archive page 15 of 18

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Dual MOSFETs shrink to protect

Fairchild Semiconductor has two new dual N-channel and two new dual P-channel 20V MOSFET BGA products with physical and electrical characteristics ideal for Li-ion battery pack protection.

News from Fairchild Semiconductor (31 July 2002)

Diodes save space and increase current ratings

International Rectifier has four new 60A schottky diodes in TO-220 packages.

News from International Rectifier (31 July 2002)

Lower losses for Schottky barrier diodes

Shindengen's J-series Schottky barrier diodes are extremely low reverse leakage devices that maintain low losses even at high operating temperatures.

News from Shindengen UK (26 July 2002)

Higher-current MOSFETs boost convertor density

A new pair of 100V HEXFET power MOSFETs can increase power density in the 48V-input half- or full-bridge topologies of DC/DC convertors used in telecomms and datacomms equipment.

News from International Rectifier (25 July 2002)

Two-in-one MOSFET module tackles 42V car systems

A new miniature, high-reliability power MOSFET module from Toshiba will significantly simplify the implementation of space-constrained automotive designs for the latest 42V power schemes.

News from Toshiba Electronics Europe (25 July 2002)

Trench MOSFETs reduce automotive on-resistance

Philips has developed a new family of leading-edge MOSFETs for automotive applications.

News from Philips Semiconductors (24 July 2002)

Diodes shrink for low power rectification

The latest miniature surface-mount diodes from Rohm offer low forward voltage and reverse current ratings and are just half the height and one-seventh the volume of previous generations of devices.

News from Rohm Electronics (UK) (24 July 2002)

Lower drive improves MOSFET efficiency

Fairchild Semiconductor has a new range of low-on-resistance N-channel 20V MOSFETs, designed to improve efficiency in DC/DC convertor applications, with low gate voltages down to 1.5V.

News from Fairchild Semiconductor (10 July 2002)

Rectifiers slim to charge into supplies

Shindengen reckons its latest bridge rectifier is the thinnest device of its type currently available.

News from Shindengen UK (10 July 2002)

Bidirectional IGBT switches enable the matrix

Dynex Semiconductor has released a pair of bidirectional IGBT modules for use in matrix convertor power stages.

News from Dynex Semiconductor ( 4 July 2002)

MOSFETs go high and low to boost DC/DC efficiency

A novel pair of MOSFETs manufactured by Vishay to help to make portable devices run cooler, use less power and function longer will be distributed by Future Electronics across Europe.

News from Future Electronics ( 3 July 2002)

MOSFETs stay cool in telecomms supplies

International Rectifier has three new high-current 150 and 200V-rated HEXFET power MOSFETs optimised for the primary side of 48V isolated DC/DC convertors.

News from International Rectifier ( 2 July 2002)

Novel insulator promises faster MOSFET structures

Motorola has been working with Nanjing University and the Institute of Physics of Chinese Academy of Sciences to characterise the material properties of lanthanum aluminate films.

News from Freescale Semiconductor (27 June 2002)

Varactors fit low voltage systems

Offering a tuning range from 0.5 to 2.5V, the ZV950 series of hyperabrupt varactor diodes from Zetex are designed to meet the needs of 3V frequency control and filtering systems.

News from Zetex (27 June 2002)

Compact MOSFETs keep on-resistance down

International Rectifier has extended its power product portfolio for portable electronics with four new dual HEXFET power MOSFETs in the TSSOP-8 package.

News from International Rectifier (26 June 2002)

MOSFET package keeps cooler and thinner

The QLPAK is novel miniature power MOSFET package that combines small size with more efficient thermal properties.

News from Philips Semiconductors (21 June 2002)

Enhanced packaging raises bridge diode reliability

Shindengen's new bridge diodes feature an optimised leadframe construction for enhanced thermal radiation, to deliver improved reliability in service.

News from Shindengen UK (30 May 2002)

P-channel MOSFETs shrink into BGAs

Four new P-channel MOSFET BGAs combine exceptionally small size with low on-resistance to deliver a highly effective solution for load switching in portable, wireless and networking applications.

News from Fairchild Semiconductor (20 May 2002)

Slimline packaging shrinks MOSFETs further

Toshiba has a new generation of miniature chip scale power MOSFET packages that are over 60% thinner than conventional TO-220SM (D2PAK) devices yet require 30% less PCB mounting area.