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Discrete Power Devices
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IGBT modules aim for high-reliability applications
Three new IGBT module product ranges rated at 1200, 1700 and 3500V in single, half-bridge, chopper and dual switch circuit configurations are designed for high-reliability applications.
News from Dynex Semiconductor (28 May 2003)
IEGTs cut losses in high-power applications
New injection enhancement gate transistor modules combine high power densities with reduced losses to improve the performance and efficiency of applications switching voltages up to 4.5kV.
News from Toshiba Electronics Europe (28 May 2003)
IEGTs promise low thermal resistance
Toshiba has combined trench gate semiconductor structure with ultra thin wafer technology to produce a new generation of ultra-efficient high-performance 1200V injection enhancement gate transistors.
News from Toshiba Electronics Europe (28 May 2003)
Tiny footprint shows merit of MOSFET
The FDZ299P is a low-voltage P-channel MOSFET in BGA packaging that provides top performance and up to 75% size reduction in battery management applications.
News from Fairchild Semiconductor (27 May 2003)
Low saturation transistors shrink to 1612 size
Pushing performance boundaries, Philips has become the first semiconductor company to offer the market BISS transistors in the 1612-sized SOT666/SS-Mini package.
News from Philips Semiconductors ( 5 May 2003)
SyncFET saves space, heat and time for PSUs
The FDS7066SN3 is the first in a new family of MOSFETs using SyncFET silicon technology to improve performance and reduce overall system cost in synchronous DC/DC buck convertor designs.
News from Fairchild Semiconductor ( 1 May 2003)
Six-IGBT module simplifies drives for white goods
At PCIM Europe 2003 Toshiba will be showing a compact and intelligent IGBT module it says will dramatically simplify the design and reduce the component count of three-phase inverter systems.
News from Toshiba Electronics Europe (14 April 2003)
Cost cutting pays off for Dynex profitability
Dynex Power has revealed its results for the fiscal year ending 31st December 2002.
News from Dynex Semiconductor ( 3 April 2003)
Property deal gives Dynex working capital
Dynex Power has completed a sale and 25-year leaseback transaction of its Doddington Road property in Lincoln, England with the investment arm of the Lincoln Co-operative Society (LCE).
News from Dynex Semiconductor (31 March 2003)
Meritorious performance from N-channel MOSFETs
Continuing the expansion of its portfolio of low-voltage power MOSFETs for switching and power management applications, ON Semiconductor has released a range of new N-channel devices.
News from ON Semiconductor (31 March 2003)
Trench process slashes MOSFET on resistance
ON Semiconductor has developed a novel trench process technology that it claims on average delivers a 40% improvement in on-resistance when compared with other trench processes on the market today.
News from ON Semiconductor (31 March 2003)
Record high transconductance for power transistors
Technical background article Oki Electric is working on a power transistor with dramatically improved amplification characteristics for wireless communications applications.
News from Oki Electric (28 March 2003)
Shrinking MOSFETs maintain high power capabilities
A new series of low-on-resistance 20-30V MOSFETs from Rohm offer higher drain currents and power ratings in a smaller package size than has previously been possible.
News from Rohm Electronics (UK) (26 March 2003)
UK source for Spanish power components
Now available in the UK from Hunter Electronic Components is the range of thyristor products from Fagor, the Spanish manufacturer of discrete semiconductor components.
News from Hunter Electronic Components ( 5 March 2003)
Ever-expanding power MOSFET portfolio
NEC has an extensive range of power MOSFETs that provides solutions for a wide variety of applications.
News from Sunrise Electronics ( 4 March 2003)
Miniscule package for bidirectional MOSFET pair
The IRF6156 is a 20V dual bidirectional HEXFET power MOSFET in a common drain configuration that is 80% smaller than devices in the TSSOP-8 package, with a profile less than 0.8mm.
News from International Rectifier (27 February 2003)
Power discretes on short lead times
Hunter Electronic Components is offering a short-lead-time alternative for discrete power devices in the MELF (SOD87) package currently in short supply worldwide.
News from Hunter Electronic Components ( 6 February 2003)
MOSFET pair provide instant power switching
A 12V complementary N- and P-channel pair of HEXFET power MOSFETs in a single SO-8 package has been introduced by International Rectifier.
News from International Rectifier (27 January 2003)
MOSFETs remove the need for extra diodes
International Rectifier has a new 500V L-Series power MOSFET with fast recovery body diode for reliable operation of zero-voltage switching (ZVS) power supplies, especially at light loads.
News from International Rectifier (15 January 2003)
Rugged triacs for efficient consumer applications
Fairchild Semiconductor has entered the standard triac market with the 600V FKPF12N60 and the 800V FKPF12N80, two 12A standard triacs for optimising performance in consumer appliances.
News from Fairchild Semiconductor (14 January 2003)
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