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Discrete Power Devices
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Decoupling diode avoids dangers of redundancy
The MLY02 decoupling diode is a low-cost solution for use in the design of redundant power supplies or for the isolation of power sources and loads.
News from Puls UK ( 9 September 2003)
MOSFETs boost power dissipation by 60%
Two new enhancement-mode trench MOSFETs feature half the on-resistance and twice the drain current of previous SOT23-packaged devices.
News from Zetex ( 5 September 2003)
New package cuts FET thermal resistance
Agilent Technologies has put its highest linearity E-pHEMT field effect transistor in a new lower-thermal-resistance version of the miniature 2 x 2mm 8-pin leadless plastic chip carrier package.
News from Agilent Technologies (27 August 2003)
Audio transistors are temperature compensated
The new Sanken SAPM01 Series of temperature-compensated audio transistors are now available from Allegro MicroSystems Europe.
News from Allegro MicroSystems Europe (26 August 2003)
Novel package cuts discrete size and heat
Philips has a new generation of small discrete leadless devices packaged using quad flat nonleaded (QFN) technology.
News from Philips Semiconductors (18 August 2003)
Dual MOSFETs shoehorn into tiny packages
A new range of complementary dual bipolar and MOSFET parts in 3 x 2 x 1mm micro leaded packages are claimed to match the performance levels of devices in much larger packages.
News from Zetex (14 August 2003)
Low-voltage MOSFET liberates 60% of board space
The FDJ129P is a new P-channel MOSFET that offers a combination of performance and space-saving benefits in power management for portable applications.
News from Fairchild Semiconductor (30 July 2003)
Planar MOSFETs show their merits
A new range of QFET planar MOSFETs uses advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, power factor correctio
News from Fairchild Semiconductor (16 July 2003)
Loss-free packaging enhances MOSFET performance
Philips has expanded the range of power MOSFETs offered in its innovative SOT669 loss-free package (LFPAK).
News from Philips Semiconductors (16 July 2003)
IGBTs enhance motor drive performance
A new series of 600V non-punch-through IGBTs housed in the TO-220 fully-isolated package features a guaranteed minimum isolation of 2kV.
News from International Rectifier ( 9 July 2003)
Novel MOSFETs promise to boost DC/DC performance
A new range of power MOSFETs uses a breakthrough TrenchFET technology to combine greatly reduced switching losses with ultralow on-resistance.
News from Vishay Siliconix ( 4 July 2003)
MOSFETs integrate protection circuitry
A new family of self-protected MOSFETs features an advanced level of integration and delivers superior performance in demanding automotive and industrial applications.
News from ON Semiconductor ( 2 July 2003)
IGBT array for three-phase motor inverters
The new SLA5200 Series from Sanken Electric is a 600V, 15A IGBT/FRD array for use in three-phase motor invertors in domestic appliances such as washing machines and refrigerators.
News from Allegro MicroSystems Europe (30 June 2003)
MOSFET temperature compensation is a sound idea
A new class of MOSFETs with built-in temperature compensation for enhanced audio performance has been developed by Sanken Electric in conjunction with the Pioneer Corp.
News from Allegro MicroSystems Europe (23 June 2003)
Three-dimensional transistor enters development
Intel's novel trigate three-dimensional transistor is moving from research to the development phase.
News from Intel Corporation (18 June 2003)
Novel power package reduces MOSFET on-resistance
Siliconix has released 14 industry-leading PowerPAK power MOSFETs featuring improved package technology that yields lower on-resistance devices.
News from Vishay Siliconix (17 June 2003)
Latchup is no problem for novel JFET design
A new series of JFETs is claimed to eliminate the problem of latchup in amplifier designs.
News from Vishay Siliconix (17 June 2003)
Dual diodes save space and power
Presenting a typical forward voltage of just 600mV for a forward current of 1A, the miniature ZXSDS2M832 dual Schottky combination offers significant improvements in circuit efficiency.
News from Zetex (11 June 2003)
Schottky diodes shrink by half
A breakthrough in Schottky diode semiconductor technology reduces power dissipation to such low levels that they can be housed in surface-mount packages less than half the size of existing devices.
News from Philips Semiconductors ( 5 June 2003)
Transistors savie space without current compromise
A new family of ultrasmall transistors are available in high-power surface mount packages and feature reductions in saturation voltage of up to 90% compared with previous technologies.
News from Rohm Electronics (UK) ( 5 June 2003)
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