Discrete Power Devices

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Novel package boosts Schottky efficiency

A new range of high-efficiency Mega Schottky rectifier diodes comes housed in compact flat lead SOD323F packages.

News from Philips Semiconductors (22 September 2004)

MOSFET boasts industry leading on-resistance

Philips has expanded its innovative uTrenchMOS range of power MOSFETs with the introduction of the PMN23UN.

News from Philips Semiconductors (21 September 2004)

IGBT modules cut their losses

Two new 1200V IGBT modules from Fairchild Semiconductor are designed for optimised on-state loss against turn-off switching loss.

News from Fairchild Semiconductor (10 September 2004)

Loss-free packaging for automotive MOSFETs

HPA high-performance automotive TrenchMOS MOSFETs are now available in Philips' innovative loss-free LFPAK packaging.

News from Philips Semiconductors ( 1 September 2004)

Chip-scale MOSFETs aim for battery-pack duties

Two new common-drain, chip-scale power MOSFETs are billed as are the industry's first such P-channel and 30V N-channel devices.

News from Vishay Siliconix (12 August 2004)

Compton takes discretes to market

Zetex has appointed David Compton as Marketing Manager for its discrete power management devices.

News from Zetex (28 July 2004)

Powerful franchise for Transonics

The Fagor Electronica range of discrete semiconductor devices is now available from Transonics.

News from Transonics (21 July 2004)

MOSFETs optimised for DC motor control

A new series of power trench MOSFETs is ideally suited for controlling the speed and direction of DC motors.

News from Philips Semiconductors ( 1 July 2004)

Diodes have ultrafast powers of recovery

A new family of ultrafast-recovery diodes is ideally suited for power applications from medium to high switching frequencies and high rates of change of current.

News from Ixys Semiconductor (28 June 2004)

Beefed-up MOSFET is versatile switching device

The NUD3048 is a highly integrated N-channel MOSFET featuring a breakdown voltage of 100V and a buffered gate voltage rating of 100V for use in -48V bus distribution power systems.

News from ON Semiconductor (28 June 2004)

MOSFETs stay stable at higher temperatures

Sunrise Electronics has a new series of power MOSFET devices manufactured in NEC's advanced UMOS-4 technology.

News from Sunrise Electronics (22 June 2004)

RF transistors find homes in Korean basestations

Agere Systems is delivering radio frequency (RF) power transistor products to Danam Communications of Korea.

News from Agere Systems (15 June 2004)

Novel MOSFETs boost convertor efficiency

Two new 30V MOSFETs exhibit the benefits of improved fast-switching technology, especially when applied, respectively, to notebook computers and POL (point of load) convertor designs.

News from Fairchild Semiconductor ( 8 June 2004)

IGBTs aim for induction heating applications

A new range of IGBTs is optimised for induction heating applications.

News from Ixys Semiconductor ( 8 June 2004)

Trench technology reduces transistor module losses

Toshiba has expanded its family of IEGT (injection enhancement gate transistor) products with the industry's first 3.3kV, 1.2kA module to use trench gate semiconductor technology.

News from Toshiba Electronics Europe ( 2 June 2004)

IEGT module aims for GTO replacement

Toshiba has combined multiple IEGT chips, the latest fast recovery diode technology and an advanced standard package design, to create a compact high-efficiency high-isolation 6.5kV, 600A IEGT module.