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Discrete Power Devices
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Online simulator simplifies switch selection
A novel online calculation and simulation tool allows designers to easily identify the optimum power semiconductor for their power control applications.
News from Semikron ( 6 May 2005)
MOSFETs withstand fast switching transients
Eight new high-voltage MOSFETs address demanding high-voltage fast-switching applications requiring high efficiency, such as active PFC, lighting and AC/DC power supply systems.
News from Fairchild Semiconductor ( 4 May 2005)
P-channel MOSFETs for active clamps
A new family of -150 and -200V P-channel power MOSFETs offers space-saving solutions for active clamp configurations.
News from Vishay Siliconix (29 April 2005)
MOSFETs resist thermal effects
Siliconix has developed the industry's first N-channel MOSFETs that combine a high 3.4V threshold voltage with on-resistance as low as 2.7mohm.
News from Vishay Siliconix (22 April 2005)
Power modules optimised for automotive control
Semikron has introduced two intelligent power-control modules optimised for use in the control systems of fuel-cell powered vehicles.
News from Semikron (20 April 2005)
Novel package shrinks discrete devices
ON Semiconductor has introduced more than 50 small signal transistors and small signal diodes in a SOT-723 flat-lead package.
News from ON Semiconductor ( 7 April 2005)
Novel MOSFET cuts on-resistance and gate charge
A new power MOSFET employs a novel super junction structure that enables a reduction in power consumption caused by on-state resistance to around 40% of the value typical for conventional MOSFETs.
News from Toshiba Electronics Europe (28 March 2005)
IGBT packs oust thyristors at higher voltages
A new line of 1700V IGBT copacks and isolated package 1700V IGBT phase leg products incorporate Ixys' proprietary 1800V Sonic-FRD ultrasoft fast-recovery diodes.
News from Ixys Semiconductor (21 March 2005)
Transistors boost basestation amplification
Agilent Technologies has added two new members of its family of high-linearity E-pHEMT FETs in the industry-standard 4.5 x 4.1 x 1.5mm SOT-89 surface-mount package.
News from Agilent Technologies (15 March 2005)
STMicroelectronics signs for packaging technology
STMicroelectronics is to license a new power MOSFET packaging technology that provides superior thermal performance via top and bottom heat dissipation paths in systems using forced air cooling.
News from Vishay Siliconix (14 March 2005)
Discrete devices hit the market
Power module manufacturer Crydom International is now offering a range of discrete power semiconductor devices.
News from Crydom International (23 February 2005)
Silicon controlled rectifiers run up to 75A
Two new 75A-rated silicon controlled rectifiers expand the IR portfolio of discrete plastic SCRs, which now ranges from 10 to 75A, with voltages up to 1600V.
News from International Rectifier (17 February 2005)
IGBT and diode come together to boost efficiency
The IRGP50B60PD is a 600V nonpunchthrough IGBT copackaged with an enhanced 25A HEXFRED diode capable of operating at switching speeds up to 150kHz.
News from International Rectifier ( 9 February 2005)
150V Schottky diodes bridge the gap
STMicroelectronics has a new series of 150V Schottky diodes for use in the secondary rectification of flyback power supplies in equipment such as DVD players, set-top boxes, TVs and hifis.
News from STMicroelectronics ( 7 February 2005)
MOSFET has designs on Class D audio amplifiers
The IRF6665 DirectFET MOSFET is claimed to be ideal for medium power Class D audio amplifiers.
News from International Rectifier ( 1 February 2005)
Low-voltage MOSFETs shrink size and on-resistance
Further expanding its portfolio of industry-leading trench technology devices, ON Semiconductor has released eight new N-channel and P-channel, low-voltage trench MOSFETs.
News from ON Semiconductor (28 January 2005)
JFETs promise to keep the noise down
New from Linear Integrated Systems, the LSK170 series of JFETs is optimised to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance.
News from Linear Integrated Systems (27 January 2005)
MOSFETs stay cool in plasma displays
User application article A new family of power MOSFETs have been designed into Samsung plasma display panels, including the largest PDP TV ever built with a diagonal viewing dimension of 102in.
News from Ixys Semiconductor (21 January 2005)
Schottky ring quads shrink into new package
Micrometrics low, medium and high barrier Schottky ring quads are now available in a new package.
News from Micrometrics (14 January 2005)
IGBTs boast superior efficiency
A new family of 600V short circuit rated IGBTs features up to 25% lower saturation voltage and lower turnoff energy, improving efficiency in a broad range of motor control applications.
News from Ixys Semiconductor (10 January 2005)
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