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Discrete Power Devices

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N-channel MOSFETs show merit in conversion

N-channel MOSFETs for switching convertor applications improve the figure of merit for resistance multiplied by charge by as much as 36%.

News from International Rectifier ( 7 July 2006)

Miniature potentiometer for voltage regulation

Panasonic Electronic Devices has succeeded in commercialising a compact potentiometer with a very small footprint to be used for voltage reductions in industrial applications.

News from Panasonic Industrial Europe ( 7 July 2006)

Low-profile trimming potentiometer

Panasonic trimming potentiometer is only 2mm square

News from Panasonic Industrial Europe ( 3 July 2006)

MOSFETs are made for the point of load

30V synchronous buck HEXFET MOSFETs are designed for DC/DC synchronous point-of-load convertors.

News from International Rectifier ( 3 July 2006)

IGBT is made for induction heating

A 1200V/15A NPT-trench IGBT has the ability to withstand as much as 300mJ of avalanche energy in induction heating applications.

News from Fairchild Semiconductor ( 3 July 2006)

Diodes adopt a smaller outline

Four high-performance diode chips are offered in the smallest surface-mount package ever.

News from Avago Technologies (28 June 2006)

Licence provides Korean source for trench MOSFETs

Vishay has licensed its Siliconix TrenchFET power MOSFET technology to KEC, the largest manufacturer of discrete electronic components in Korea.

News from Vishay Siliconix (16 June 2006)

Miniature MOSFETs are cool portable option

Smaller, thinner, faster, cooler running and more reliable MOSFET devices promise leading edge performance and design flexibility for portable applications.

News from ON Semiconductor ( 2 June 2006)

Two MOSFETs in one save space and power

International Rectifier has introduced four SO-8 30V dual HEXFET MOSFETs for synchronous buck convertor applications up to 6A.

News from International Rectifier (19 May 2006)

PIN diodes raise stability and reliability

High-speed PIN diodes are made from high-resistivity epitaxial silicon material, passivated with silicon dioxide to achieve high levels of stability and reliability.

News from Link Microtek (15 May 2006)

Bipolar transistors get more in a SOT23 package

A range of low voltage bipolar transistors extends the power handling capability of the SOT23 package, enabling designers to shrink products by replacing larger SOT89 and SOT223 equivalent parts.

News from Zetex ( 5 May 2006)

IGBTs claim motor control savings

Four 600V insulated gate bipolar transistors can reduce power dissipation in inverters by up to 60% in motor control applications up to 2.5kW.

News from International Rectifier (21 April 2006)

Diodes shrink into SOD-723 packages

ON Semiconductor has introduced three new Schottky and three new ESD diodes in 1.4 x 0.6 x 0.5mm SOD-723 packages.

News from ON Semiconductor (18 April 2006)

IGBTs oust MOSFETs from plasma displays

High-current low-loss discrete IGBTs are designed to meet the power supply requirements of plasma display panels.

News from Toshiba Electronics Europe (14 April 2006)

Rectifiers offer application-optimised variants

New rectifiers perform with very low conduction and low switching losses, providing a new benchmark for efficiency by reducing the energy loss in electronic systems.

News from Ixys Semiconductor (23 March 2006)

Chinese joint venture makes the top 10

ON Semiconductor's Leshan-Phoenix Semiconductor Company joint venture has been ranked among China's top 10 semiconductor assembly and test enterprises for 2005.

News from ON Semiconductor ( 3 March 2006)

MOSFET is qualified for automotive use

A 100V-rated logic-level trench MOSFET is Q101-qualified for automotive use up to the maximum junction temperature of 175C.

News from International Rectifier (28 February 2006)

PIN diodes come in smaller plastic packages

Three high-performance PIN diode chips come in low-cost RoHS-compliant lead-free SOD-323 plastic packages.

News from Avago Technologies (22 February 2006)

Californian power devices come to the UK

Anglia has signed a UK and Ireland distribution agreement with Diodes Incorporated, a manufacturer of discrete semiconductor devices based in Westlake Village, California.

News from Anglia (22 February 2006)

Bipolars pair up for driving duties

Combining complementary NPN and PNP transistors in the SOT236 package, the ZXTC2045E6 produces the drive needed to switch high power MOSFETs and IGBTs in power supply designs.

News from Zetex (14 February 2006)

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