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Discrete Power Devices
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Transistors protect laptops
MOSFET family is designed for use in the protection circuitry of lithium-ion batteries for notebook PCs.
News from NEC Electronics (Europe) (24 April 2007)
QPL rectifiers target high-reliability supplies
High-reliability Schottky rectifiers are manufactured in accordance to the Defense Supply Center Columbus Qualified Products List.
News from International Rectifier (19 April 2007)
Speedy diodes smooth out LCD TV supplies
Stealth II and Hyperfast II diodes help optimise LCD TV switch-mode power supply applications.
News from Fairchild Semiconductor (13 April 2007)
MOSFET chipset raises bar on efficiency
Chipset powers high-current DC/DC convertors used in advanced telecomms and datacomms systems, notebook, high-end desktops and servers.
News from International Rectifier (10 April 2007)
MOSFETs feed back to enhance reliability
Low side self-protecting MOSFETs in SOT223 packages provide diagnostic feedback via a separate status pin.
News from Zetex ( 3 April 2007)
Digital transistors take bias networks onboard
Two families of 200mW digital transistors integrate external resistor bias networks into the smallest form factor package on the market.
News from Fairchild Semiconductor (27 March 2007)
HEMTs for wireless applications
Three new gallium nitride (GaN) high electron-mobility transistors (HEMTs) provide good linear power and efficiency for WiMAX and broadband wireless applications operating between 2.3 and 3.9GHz.
News from Cree (21 March 2007)
Transistors claim breakthrough in small signal
Low-saturation-voltage transistors reduce power loss by 80% compared with general-purpose devices.
News from NXP (formerly Philips Semiconductors) ( 9 March 2007)
MOSFETs cut figure of merit for display switching
N-channel MOSFETs provide industry-leading system efficiency and space optimisation in plasma display panel applications.
News from Fairchild Semiconductor (16 February 2007)
Power transistor is made for Chinese basestations
High-power multistage RF power LDMOS FET is characterised for TD-SCDMA wireless basestations.
News from Freescale Semiconductor (14 February 2007)
SiC power devices reach new highs
Cree is shipping production quantities of a new 50A Zero Recovery Schottky rectifier operating at 1200V.
News from Cree (12 February 2007)
20V MOSFETs switch down to 1.8V
Three new N-channel enhancement-mode MOSFETs are developed specifically for applications with limited drive voltage availability.
News from Zetex (31 January 2007)
More power devices from STMicroelectronics
ST linear IC and discrete device range expands with a new range of IGBTs, increased coverage of surface mount package options and additions to MOSFET ranges. Brochure available
News from Rapid Electronics (31 January 2007)
TTI stars for Vishay in Europe
In appreciation of best overall revenue growth and geographical coverage, Vishay Europe has honoured TTI Europe with its 2006 European Sales Distribution Award. Brochure available
News from TTI Europe (25 January 2007)
N-channel MOSFETs feature double-sided cooling
N-channel 20, 30 and 40V PolarPAK MOSFETs with double-sided cooling give designers a new way to reduce system size and cost through better MOSFET thermal performance.
News from Vishay Siliconix (23 January 2007)
Power MOSFET is flexible about its input voltage
150V MOSFET for isolated DC/DC convertors operates from a wide range, 36 to 75V universal telecommunications input and 48V fixed input systems.
News from International Rectifier (17 January 2007)
Packages enhance power MOSFET thermal performance
Eight N-channel power MOSFETs in innovative PowerPAK ChipFET packages offer advanced thermal performance in a compact 3 x 1.8mm footprint.
News from Vishay Siliconix (16 January 2007)
MOSFET is made for high current switches
The KMB050N60P is an N-channel enhancement-mode MOSFET rated at 50A and 60V drain-source voltage in planar-stripe technology.
News from First Components (15 January 2007)
Dual power MOSFET is speedy switcher
KEC, the largest manufacturer of discrete electronic components in Korea, has announced a 4.8A dual power MOSFET in an SO-8 surface mount package.
News from First Components ( 4 January 2007)
Gallium nitride power transistor
Panasonic has developed a Gallium Nitride (GaN) power transistor with normally off operation.
News from Panasonic Industrial Europe (15 December 2006)
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