Discrete Power Devices

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Distribution deal extends to full line

Digi-Key now carries the full range of Vishay semiconductor and passive components.

News from Digi-Key Corporation (20 December 2007)

MOSFET and diode on one chip boost efficiency

Benefits result from the low forward voltage drop and reverse recovery charge of integrated Schottky diode and the reduced PCB parasitic inductance from both devices on a single chip.

News from Vishay Siliconix (13 December 2007)

MOSFET cuts on-resistance to new lows

High-current N-channel device is intended particularly for the paralleling configuration power supplies that are widely used to increase system reliability in server applications.

News from STMicroelectronics ( 3 December 2007)

RF MOSFET cuts set-top-box standby losses

The use of lossless switching RF MOSFETs has become more important with increasing legislation on standby power consumption in electronic products.

News from First Components (19 November 2007)

Smaller MOSFETs handle automotive extremes

AEC-Q101-qualified MOSFETs are the smallest on the market capable of handling power applications in the automotive environment.

News from Vishay Siliconix (15 November 2007)

Reduced resistance cuts load switching losses

N-channel MOSFETs feature 20V drain-to-source and gate-to-source voltage ratings and offer on-resistance specifications as low as 1.6mohm in the SO-8 footprint area

News from Vishay Siliconix ( 8 November 2007)

Silicon transistor edges into GaAs applications

Microwave NPN transistor combines high switching frequency, high gain and very low noise to make it an ideal solution for a variety of RF applications.

News from NXP Semiconductors ( 7 November 2007)

Switches save space, power and costs

Slew-rate-controlled switches are widely used in portable systems to replace discrete circuitry used to maximise battery efficiency and prolong battery life.

News from Advanced Analogic Technologies ( 1 November 2007)

MOSFETs boost drain current

The TPCA8012-H and TPCA8019-H N-channel MOSFETs extend the UMOS V-H series with higher drain current of 40 and 45A (maximum) and lower R(DSON) of 4.9 and 3.1mohm, respectively.

News from Toshiba Electronics Europe (16 October 2007)

MOSFETs save device power

Vishay Intertechnology's Siliconix p-channel MOSFETs can turn off features such as the display or the power amplifier when they are not being used.

News from Vishay Siliconix (11 October 2007)

Low-voltage transistors suit slimline products

Zetex Semiconductors' ZXTP25020CFF and ZXTP19020DFF serve as cost-effective switchers in a variety of portable applications.

News from Zetex (18 September 2007)

IGBT offers low conduction losses

The FGH30N60LSD is designed to increase system efficiency while meeting low-frequency requirements.

News from Fairchild Semiconductor (24 August 2007)

MOSFETs survive larger voltage spikes

Low-on-resistance N-channel MOSFETs boost system efficiency and offer new levels of ESD prptection.

News from Fairchild Semiconductor (16 August 2007)

1.2V-rated MOSFETs ease portable power management

Devices bring the MOSFET turn-on voltage into alignment with the 1.2 to 1.3V operating voltages of digital ICs used in mobile electronics, enabling safer and more reliable designs.

News from Vishay Siliconix (16 August 2007)

Package cuts MOSFETs down to size and heat

P-channel power MOSFETs in PowerPAK ChipFET packages promise advanced thermal performance in a compact 3 x 1.8mm footprint.

News from Vishay Siliconix (17 July 2007)

IGBT modules handle more heat on the road

Solder-free IGBT module has five times higher temperature-cycling capability for convertors in electric and hybrid vehicles.

News from Semikron ( 6 July 2007)

Schottky diodes increase power efficiency

Dual 10 and 15A Schottky barrier diodes in TO-220IS isolated packages are made by KEC Corporation of Korea.

News from First Components (11 June 2007)

RF transistor makes powerful claims

Power transistor delivers pulsed RF output power of 1kW at 130MHz and features the highest drain efficiency and power gain of any device in its class.