http://www.electronicstalk.com/indexes/categorybrowsead.html Discrete Power Devices latest news on Electronicstalk en-gb Copyright (C)2008 Pro-Talk Ltd. All rights reserved. Thu, 15 May 2008 08:00:00 UT Thu, 15 May 2008 08:00:00 UT http://www.pro-talk.com/images/protalklogo90.gif http://www.pro-talk.com/ 90 79 New devices allow designers to use robust low-cost IGBT technology in energy-sensitive circuits such as lighting ballasts operating well above 20kHz. Wed, 14 May 2008 08:00:00 UT STMicroelectronics http://www.electronicstalk.com/news/stm/stm271.html A 600V N-channel MOSFET claims the industry's best on-resistance of 60mohm for fast-recovery MOSFETs in the standard TO-247 package. Wed, 07 May 2008 08:00:00 UT STMicroelectronics http://www.electronicstalk.com/news/stm/stm268.html The world's first high-frequency high-voltage vertical field effect transistors deliver increased bandwidth, voltage and power levels to radar and avionic applications. Thu, 01 May 2008 08:00:00 UT HVVi Semiconductors http://www.electronicstalk.com/news/hvv/hvv100.html With a low vertical clearance of 0.5mm, the new SOT-963 packaged NTUD312x devices satisfy the requirements of the new generation ultrathin handheld portable devices. Thu, 17 Apr 2008 08:00:00 UT ON Semiconductor http://www.electronicstalk.com/news/onw/onw295.html The latest addition to Freescale's family of RF power LDMOS transistors is designed for TV transmitters employing both analogue and digital modulation formats. Tue, 15 Apr 2008 08:00:00 UT Freescale Semiconductor http://www.electronicstalk.com/news/mot/mot290.html Typical applications include load switching and battery protection in portable devices such as cellphones, PDAs, digital cameras, MP3 players and smart phones. Thu, 10 Apr 2008 08:00:00 UT Vishay Siliconix http://www.electronicstalk.com/news/vsh/vsh157.html Microsemi transistors incorporate an internal pre-match, which enables them to deliver the best possible performance over their entire operating frequency range. Tue, 01 Apr 2008 08:00:00 UT Link Microtek http://www.electronicstalk.com/news/lib/lib234.html MOSFETs are designed for use in lithium ion battery packs and battery modules of mobile handsets. Mon, 31 Mar 2008 08:00:00 UT MagnaChip Semiconductor http://www.electronicstalk.com/news/mpz/mpz112.html N-channel power MOSFET claims record-breaking specifications for on-resistance and figure of merit. Thu, 27 Mar 2008 08:00:00 UT Vishay Siliconix http://www.electronicstalk.com/news/vsh/vsh156.html Field stop structure and avalanche-rugged trench gate technology combine to offer optimal tradeoffs between conduction losses and switching losses. Wed, 19 Mar 2008 08:00:00 UT Fairchild Semiconductor http://www.electronicstalk.com/news/fai/fai449.html Zetex Semiconductors' ZXMN2F34MA suits space-starved switching and power management applications, such as external switches in buck/boost PoL convertors. Thu, 06 Mar 2008 08:00:00 UT Zetex http://www.electronicstalk.com/news/zet/zet202.html Application-specific devices use IR's latest-generation field stop trench technology to reduce conduction and switching losses. Thu, 06 Mar 2008 08:00:00 UT International Rectifier http://www.electronicstalk.com/news/sil/sil308.html SiC MESFETs are optimised for applications such as wideband military communications, secure communications, Class A and A/B amplifiers, TDMA, EDGE, CDMA, W-CDMA broadband amplifiers and WiMAX. Wed, 05 Mar 2008 08:00:00 UT Digi-Key Corporation http://www.electronicstalk.com/news/diz/diz120.html MOSFETs deliver power dissipation and performance comparable to SOT23 but occupy only 14% of the printed circuit board space. Tue, 26 Feb 2008 08:00:00 UT NXP Semiconductors http://www.electronicstalk.com/news/phi/phi423.html Devices enable the use of considerably smaller heatsinks, and also allow the end product to benefit from more reliable operation in hot environments. Fri, 22 Feb 2008 08:00:00 UT STMicroelectronics http://www.electronicstalk.com/news/stm/stm257.html STripFET technology makes use of very high equivalent cell density and smaller cell features to achieve extremely low on-resistance and losses, while using less silicon area. Thu, 21 Feb 2008 08:00:00 UT STMicroelectronics http://www.electronicstalk.com/news/stm/stm256.html Power MOSFET devices optimise DC/DC conversion and reduce power losses at critical current levels. Mon, 18 Feb 2008 08:00:00 UT ON Semiconductor http://www.electronicstalk.com/news/onw/onw284.html The FDD4141 offers low on-resistance and 50% lower gate charge compared with current generation MOSFETs. Fri, 15 Feb 2008 08:00:00 UT Fairchild Semiconductor http://www.electronicstalk.com/news/fai/fai446.html High-speed switching MOSFETs provide higher drain current and lower on-state resistance, combined with the power efficiency advantages of the UMOS V-H Series. Fri, 18 Jan 2008 08:00:00 UT Toshiba Electronics Europe http://www.electronicstalk.com/news/tos/tos369.html Advanced architecture and advanced package manage heat dissipation and reduce power loss with a maximum on-resistance of 1.5mohm. Thu, 17 Jan 2008 08:00:00 UT NEC Electronics (Europe) http://www.electronicstalk.com/news/nec/nec141.html Breakdown voltage is more than 5x higher than previously reported highest values in GaN power transistors. Wed, 09 Jan 2008 08:00:00 UT Panasonic Industrial Europe http://www.electronicstalk.com/news/pae/pae125.html Digi-Key now carries the full range of Vishay semiconductor and passive components. Thu, 20 Dec 2007 08:00:00 UT Digi-Key Corporation http://www.electronicstalk.com/news/diz/diz118.html