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Memory Devices and Modules
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Serial EEPROMs have single I/O bus interface
Patent-pending UNI/O memory-device protocol is developed in response to market trends toward smaller consumer-electronic products with more features and functionality.
News from Microchip Technology ( 8 May 2008)
Working group to define mobile memory interface
Serial Port Memory Technology will enable extended battery life, bandwidth flexibility, significantly reduced pin count, lower power demand and multiple ports by using a serial interface.
News from Silicon Image ( 5 May 2008)
Licence puts Spansion on IBM's Racetrack
Memory breakthrough could lead to cheaper, more durable electronic devices that would hold far more data in the same amount of space and boot up more quickly.
News from Spansion (29 April 2008)
Ferroelectric RAM puts events on the record
Integrated event monitoring device continuously monitors state changes, stores them in FRAM and alerts the host system to the changes.
News from Ramtron International (22 April 2008)
FRAM offers upgrade for Flash applications
High-density nonvolatile ferroelectric RAM features low power consumption and communicates via a high-speed serial peripheral interface.
News from Ramtron International (18 April 2008)
Company welcomes lifting of CVD duty
Memorysolution expressly welcomes the decision of the EU Council to repeal the countervailing duty imposed on imports of Hynix DRAM into the EU.
News from Memorysolution (15 April 2008)
Audio recorder IC manages more messages
Single-chip multimessage digital recoding ICs are targeted at automotive, industrial and telecommunications markets.
News from Winbond Electronics Corp America (15 April 2008)
Speedy serial Flash targets handset integration
Serial interface Flash memory devices offer an ideal code storage medium for applications where small form factor, low power consumption and high datarate are a must.
News from Silicon Storage Technology ( 8 April 2008)
Flash memories cut handset design costs
MirrorBit Eclipse architecture-based MCPs offer exceptional user experience in mid- to high-end mobile phone platforms.
News from Spansion ( 7 April 2008)
Solid-state drives are made with MLC Flash
Toshiba SSDs achieve overall PC benchmark scores better than 5400 and 7200rev/min HDDs and comparable to selected SATA SLC NAND SSDs.
News from Toshiba Electronics Europe ( 3 April 2008)
Flash joint venture hits the ground running
Numonyx begins operations in the growing and dynamic nonvolatile memory business with considerable momentum.
News from Numonyx ( 1 April 2008)
MRAM adds programmability to HMI line
User application article 4Mbit MRAM device is used in Siemens' Simatic Multipanel MP 277 and MP 377 human machine interface for industrial automation systems.
News from Freescale Semiconductor ( 1 April 2008)
Dual-channel memory maximises bandwidth
When working in dual channel mode, a maximum theoretical bandwidth of 25.6Gbyte/s can be reached.
News from PQI Europe (28 March 2008)
Low-power SRAMs expand to 64Mbit density
High-capacity low-power SRAMs are increasingly being used as an alternative to SDRAM, which undergoes frequent generational changes.
News from Renesas Technology Europe (26 March 2008)
Memory modules keep up with Xeon processors
Kingston 800MHz FB-DIMMs are shipping in capacities ranging from 512Mbyte to 4Gbyte.
News from Kingston Technology (25 March 2008)
Manufacturing efficiency boosts Flash output
Increased output from both its its Austin, Texas and Aizu-Wakamatsu, Japan fabs will enable Spansion to reduce its dependencies on outside foundry support.
News from Spansion (20 March 2008)
Serial EEPROM portfolio runs from 2 to 128Kbit
Three new devices in the 2 x 3 x 0.6mm MLP8 package now allow designers to choose from footprint-compatible devices at any required density.
News from STMicroelectronics (20 March 2008)
EEPROMs are made for latest DIMM modules
Serial Presence Detect EEPROM devices support the latest DDR2 DIMM modules as well as future DDR3 DIMM modules.
News from Microchip Technology (18 March 2008)
Processor companion takes crystal onboard
Combines 64Kbit of nonvolatile ferroelectric RAM with an enhanced real-time clock/calendar and integrated 32kHz watch crystal.
News from Ramtron International (11 March 2008)
Flash output ramps up at 65nm in Japan
Spansion is the first company to produce next-generation NOR Flash memory technology on 300mm wafers.
News from Spansion (10 March 2008)
Flash drives boost industrial storage
ATA solid-state storage devices operate over industrial temperature ranges, making them compelling options for industrial applications operating in harsh environments
News from Silicon Storage Technology (26 February 2008)
DDR2 modules promise greater stability
Dual-channel modules are perfect for memory-hungry operating systems, professional grade application software and the latest gaming needs.
News from PQI Europe (25 February 2008)
Big NAND Flash shrinks to 43nm process
New 16Gbit products have a chip area less than 70% that of same-density NAND Flash memories fabricated with 56nm process.
News from Toshiba Electronics Europe ( 8 February 2008)
Flash/RAM combinations provide speed boost
The products in the 34WA series use a 6 x 8 x 1mm semiconductor package, making them the smallest address/data bus multiplex combination memory devices available on the market today.
News from Silicon Storage Technology ( 5 February 2008)
SoC platform allows performance tuning
The FlashPoint platform uses a sophisticated design configuration engine that enables the system to be tuned for optimal performance
News from Denali Software (29 January 2008)
Processor companion brings more to the party
Companion devices with up to 256Kbit of ferroelectric RAM include a more efficient trickle charger and a real-time clock that requires only a standard 12.5pF external watch crystal.
News from Ramtron International (21 January 2008)
Memory modules embed Flash with USB
64Mbyte to 16Gbyte 10-pin eUSB drives deliver high performance, reliability, advanced ECC and wear levelling for embedded and enterprise systems OEMs.
News from Viking InterWorks (10 January 2008)
Seminar to put FRAM on automotive map
FRAM's fast write time and high endurance allows automotive navigation systems to quickly and continuously capture dynamic information without the risk of wearing out the memory.
News from Ramtron International ( 3 January 2008)
Tunnel layer to boost future Flash densities
Elemental technology opens the way for memory devices with densities of over 100Gbit in the 10nm generation, which lies four generations ahead.
News from Toshiba Electronics Europe (21 December 2007)
Solid-state drives use MLC NAND Flash
By applying MLC technology, Toshiba has realised a 128Gbyte density in a 1.8in form factor.
News from Toshiba Electronics Europe (19 December 2007)
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