Memory devices and modules
(a sub category of Active components)
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Latest articles from 'Memory devices and modules'
News releases from this sub-category
Showing 76-100 of 775 articles
Flash memories cut handset design costs
MirrorBit Eclipse architecture-based MCPs offer exceptional user experience in mid- to high-end mobile phone platforms.
News from Spansion, Apr 7, 2008
Solid-state drives are made with MLC Flash
Toshiba SSDs achieve overall PC benchmark scores better than 5400 and 7200rev/min HDDs and comparable to selected SATA SLC NAND SSDs.
News from Toshiba Electronics Europe, Apr 3, 2008
Flash joint venture hits the ground running
Numonyx begins operations in the growing and dynamic nonvolatile memory business with considerable momentum.
News from Numonyx, Apr 1, 2008
MRAM adds programmability to HMI line
4Mbit MRAM device is used in Siemens' Simatic Multipanel MP 277 and MP 377 human machine interface for industrial automation systems.
News from Freescale Semiconductor, Apr 1, 2008
Dual-channel memory maximises bandwidth
When working in dual channel mode, a maximum theoretical bandwidth of 25.6Gbyte/s can be reached.
News from PQI Europe, Mar 28, 2008
Low-power SRAMs expand to 64Mbit density
High-capacity low-power SRAMs are increasingly being used as an alternative to SDRAM, which undergoes frequent generational changes.
News from Renesas Technology Europe, Mar 26, 2008
Memory modules keep up with Xeon processors
Kingston 800MHz FB-DIMMs are shipping in capacities ranging from 512Mbyte to 4Gbyte.
News from Kingston Technology, Mar 25, 2008
Manufacturing efficiency boosts Flash output
Increased output from both its its Austin, Texas and Aizu-Wakamatsu, Japan fabs will enable Spansion to reduce its dependencies on outside foundry support.
News from Spansion, Mar 20, 2008
Serial EEPROM portfolio runs from 2 to 128Kbit
Three new devices in the 2 x 3 x 0.6mm MLP8 package now allow designers to choose from footprint-compatible devices at any required density.
News from STMicroelectronics, Mar 20, 2008
EEPROMs are made for latest DIMM modules
Serial Presence Detect EEPROM devices support the latest DDR2 DIMM modules as well as future DDR3 DIMM modules.
News from Microchip Technology, Mar 18, 2008
Processor companion takes crystal onboard
Combines 64Kbit of nonvolatile ferroelectric RAM with an enhanced real-time clock/calendar and integrated 32kHz watch crystal.
News from Ramtron International, Mar 11, 2008
Flash output ramps up at 65nm in Japan
Spansion is the first company to produce next-generation NOR Flash memory technology on 300mm wafers.
News from Spansion, Mar 10, 2008
Flash drives boost industrial storage
ATA solid-state storage devices operate over industrial temperature ranges, making them compelling options for industrial applications operating in harsh environments
News from Silicon Storage Technology, Feb 26, 2008
DDR2 modules promise greater stability
Dual-channel modules are perfect for memory-hungry operating systems, professional grade application software and the latest gaming needs.
News from PQI Europe, Feb 25, 2008
Big NAND Flash shrinks to 43nm process
New 16Gbit products have a chip area less than 70% that of same-density NAND Flash memories fabricated with 56nm process.
News from Toshiba Electronics Europe, Feb 8, 2008
Flash/RAM combinations provide speed boost
The products in the 34WA series use a 6 x 8 x 1mm semiconductor package, making them the smallest address/data bus multiplex combination memory devices available on the market today.
News from Silicon Storage Technology, Feb 5, 2008
SoC platform allows performance tuning
The FlashPoint platform uses a sophisticated design configuration engine that enables the system to be tuned for optimal performance
News from Denali Software, Jan 29, 2008
Processor companion brings more to the party
Companion devices with up to 256Kbit of ferroelectric RAM include a more efficient trickle charger and a real-time clock that requires only a standard 12.5pF external watch crystal.
News from Ramtron International, Jan 21, 2008
Memory modules embed Flash with USB
64Mbyte to 16Gbyte 10-pin eUSB drives deliver high performance, reliability, advanced ECC and wear levelling for embedded and enterprise systems OEMs.
News from Viking InterWorks, Jan 10, 2008
Seminar to put FRAM on automotive map
FRAM's fast write time and high endurance allows automotive navigation systems to quickly and continuously capture dynamic information without the risk of wearing out the memory.
News from Ramtron International, Jan 3, 2008
Tunnel layer to boost future Flash densities
Elemental technology opens the way for memory devices with densities of over 100Gbit in the 10nm generation, which lies four generations ahead.
News from Toshiba Electronics Europe, Dec 21, 2007
Solid-state drives use MLC NAND Flash
By applying MLC technology, Toshiba has realised a 128Gbyte density in a 1.8in form factor.
News from Toshiba Electronics Europe, Dec 19, 2007
Memory franchise has global coverage
Franchise agreement with Integrated Silicon Solution encompasses more than 60 new memory products.
News from Farnell InOne, Dec 17, 2007
Ferroelectric RAM joins automotive club
Ideal for advanced powertrain systems, the FM25040A-GA offers fast writes, virtually unlimited endurance and low power.
News from Ramtron International, Dec 17, 2007
More Flash for your money
Jameco customers now have a larger selection of popular 3 and 5V Flash devices from the largest company exclusively focused on Flash solutions.
News from Jameco Electronics, Dec 13, 2007
Showing 76-100 of 775 articles
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What is it?
Memory devices and modules:
Memory devices are used to store information in a system. There are many types of memory but these can be generically classified into either volatile or non-volatile devices.
Featured articles
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Innovative Silicon enhances Z-Ram technology
Innovative Silicon, the developer of the Z-Ram zero-capacitor floating body (FB) memory technology has announced two enhancements to the Z-Ram technology.
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Numonyx serial flash range targets embedded market
Numonyx has introduced what is said to be the industry's first 65nm multiple I/O serial flash memory product line.
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