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    <title>Memory Devices and Modules latest news on Electronicstalk</title>
    <link>http://www.electronicstalk.com/indexes/categorybrowseam.html</link>
    <description>Memory Devices and Modules latest news on Electronicstalk</description>
    <language>en-gb</language>
    <copyright>Copyright (C)2008 Pro-Talk Ltd. All rights reserved.</copyright>
    <pubDate>Wed, 14 May 2008 08:00:00 UT</pubDate>
    <lastBuildDate>Wed, 14 May 2008 08:00:00 UT</lastBuildDate>
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    <item>
      <title>Serial EEPROMs have single I/O bus interface</title>
      <description>Patent-pending UNI/O memory-device protocol is developed in response to market trends toward smaller consumer-electronic products with more features and functionality. </description>
      <pubDate>Thu, 08 May 2008 08:00:00 UT</pubDate>
      <category>Microchip Technology</category>
      <link>http://www.electronicstalk.com/news/ari/ari276.html</link>
    </item>
    <item>
      <title>Working group to define mobile memory interface</title>
      <description>Serial Port Memory Technology will enable extended battery life, bandwidth flexibility, significantly reduced pin count, lower power demand and multiple ports by using a serial interface.</description>
      <pubDate>Mon, 05 May 2008 08:00:00 UT</pubDate>
      <category>Silicon Image</category>
      <link>http://www.electronicstalk.com/news/snr/snr110.html</link>
    </item>
    <item>
      <title>Licence puts Spansion on IBM's Racetrack</title>
      <description>Memory breakthrough could lead to cheaper, more durable electronic devices that would hold far more data in the same amount of space and boot up more quickly.</description>
      <pubDate>Tue, 29 Apr 2008 08:00:00 UT</pubDate>
      <category>Spansion</category>
      <link>http://www.electronicstalk.com/news/ssi/ssi143.html</link>
    </item>
    <item>
      <title>Ferroelectric RAM puts events on the record</title>
      <description>Integrated event monitoring device continuously monitors state changes, stores them in FRAM and alerts the host system to the changes.</description>
      <pubDate>Tue, 22 Apr 2008 08:00:00 UT</pubDate>
      <category>Ramtron International</category>
      <link>http://www.electronicstalk.com/news/ram/ram169.html</link>
    </item>
    <item>
      <title>FRAM offers upgrade for Flash applications</title>
      <description>High-density nonvolatile ferroelectric RAM features low power consumption and communicates via a high-speed serial peripheral interface.</description>
      <pubDate>Fri, 18 Apr 2008 08:00:00 UT</pubDate>
      <category>Ramtron International</category>
      <link>http://www.electronicstalk.com/news/ram/ram168.html</link>
    </item>
    <item>
      <title>Company welcomes lifting of CVD duty</title>
      <description>Memorysolution expressly welcomes the decision of the EU Council to repeal the countervailing duty imposed on imports of Hynix DRAM into the EU.</description>
      <pubDate>Tue, 15 Apr 2008 08:00:00 UT</pubDate>
      <category>Memorysolution</category>
      <link>http://www.electronicstalk.com/news/mmo/mmo113.html</link>
    </item>
    <item>
      <title>Audio recorder IC manages more messages</title>
      <description>Single-chip multimessage digital recoding ICs are targeted at automotive, industrial and telecommunications markets.</description>
      <pubDate>Tue, 15 Apr 2008 08:00:00 UT</pubDate>
      <category>Winbond Electronics Corp America</category>
      <link>http://www.electronicstalk.com/news/nef/nef105.html</link>
    </item>
    <item>
      <title>Speedy serial Flash targets handset integration</title>
      <description>Serial interface Flash memory devices offer an ideal code storage medium for applications where small form factor, low power consumption and high datarate are a must.</description>
      <pubDate>Tue, 08 Apr 2008 08:00:00 UT</pubDate>
      <category>Silicon Storage Technology</category>
      <link>http://www.electronicstalk.com/news/sor/sor127.html</link>
    </item>
    <item>
      <title>Flash memories cut handset design costs</title>
      <description>MirrorBit Eclipse architecture-based MCPs offer exceptional user experience in mid- to high-end mobile phone platforms.</description>
      <pubDate>Mon, 07 Apr 2008 08:00:00 UT</pubDate>
      <category>Spansion</category>
      <link>http://www.electronicstalk.com/news/ssi/ssi141.html</link>
    </item>
    <item>
      <title>Solid-state drives are made with MLC Flash</title>
      <description>Toshiba SSDs achieve overall PC benchmark scores better than 5400 and 7200rev/min HDDs and comparable to selected SATA SLC NAND SSDs.</description>
      <pubDate>Thu, 03 Apr 2008 08:00:00 UT</pubDate>
      <category>Toshiba Electronics Europe</category>
      <link>http://www.electronicstalk.com/news/tos/tos377.html</link>
    </item>
    <item>
      <title>Flash joint venture hits the ground running</title>
      <description>Numonyx begins operations in the growing and dynamic nonvolatile memory business with considerable momentum.</description>
      <pubDate>Tue, 01 Apr 2008 08:00:00 UT</pubDate>
      <category>Numonyx</category>
      <link>http://www.electronicstalk.com/news/nuo/nuo100.html</link>
    </item>
    <item>
      <title>MRAM adds programmability to HMI line</title>
      <description>4Mbit MRAM device is used in Siemens' Simatic Multipanel MP 277 and MP 377 human machine interface for industrial automation systems.</description>
      <pubDate>Tue, 01 Apr 2008 08:00:00 UT</pubDate>
      <category>Freescale Semiconductor</category>
      <link>http://www.electronicstalk.com/news/mot/mot285.html</link>
    </item>
    <item>
      <title>Dual-channel memory maximises bandwidth</title>
      <description>When working in dual channel mode, a maximum theoretical bandwidth of 25.6Gbyte/s can be reached.</description>
      <pubDate>Fri, 28 Mar 2008 08:00:00 UT</pubDate>
      <category>PQI Europe</category>
      <link>http://www.electronicstalk.com/news/pqi/pqi103.html</link>
    </item>
    <item>
      <title>Low-power SRAMs expand to 64Mbit density</title>
      <description>High-capacity low-power SRAMs are increasingly being used as an alternative to SDRAM, which undergoes frequent generational changes.</description>
      <pubDate>Wed, 26 Mar 2008 08:00:00 UT</pubDate>
      <category>Renesas Technology Europe</category>
      <link>http://www.electronicstalk.com/news/ren/ren286.html</link>
    </item>
    <item>
      <title>Memory modules keep up with Xeon processors</title>
      <description>Kingston 800MHz FB-DIMMs are shipping in capacities ranging from 512Mbyte to 4Gbyte.</description>
      <pubDate>Tue, 25 Mar 2008 08:00:00 UT</pubDate>
      <category>Kingston Technology</category>
      <link>http://www.electronicstalk.com/news/kin/kin159.html</link>
    </item>
    <item>
      <title>Manufacturing efficiency boosts Flash output</title>
      <description>Increased output from both its its Austin, Texas and Aizu-Wakamatsu, Japan fabs will enable Spansion to reduce its dependencies on outside foundry support.</description>
      <pubDate>Thu, 20 Mar 2008 08:00:00 UT</pubDate>
      <category>Spansion</category>
      <link>http://www.electronicstalk.com/news/ssi/ssi139.html</link>
    </item>
    <item>
      <title>Serial EEPROM portfolio runs from 2 to 128Kbit</title>
      <description>Three new devices in the 2 x 3 x 0.6mm MLP8 package now allow designers to choose from footprint-compatible devices at any required density.</description>
      <pubDate>Thu, 20 Mar 2008 08:00:00 UT</pubDate>
      <category>STMicroelectronics</category>
      <link>http://www.electronicstalk.com/news/stm/stm263.html</link>
    </item>
    <item>
      <title>EEPROMs are made for latest DIMM modules</title>
      <description>Serial Presence Detect EEPROM devices support the latest DDR2 DIMM modules as well as future DDR3 DIMM modules.</description>
      <pubDate>Tue, 18 Mar 2008 08:00:00 UT</pubDate>
      <category>Microchip Technology</category>
      <link>http://www.electronicstalk.com/news/ari/ari271.html</link>
    </item>
    <item>
      <title>Processor companion takes crystal onboard</title>
      <description>Combines 64Kbit of nonvolatile ferroelectric RAM with an enhanced real-time clock/calendar and integrated 32kHz watch crystal.</description>
      <pubDate>Tue, 11 Mar 2008 08:00:00 UT</pubDate>
      <category>Ramtron International</category>
      <link>http://www.electronicstalk.com/news/ram/ram167.html</link>
    </item>
    <item>
      <title>Flash output ramps up at 65nm in Japan</title>
      <description>Spansion is the first company to produce next-generation NOR Flash memory technology on 300mm wafers.</description>
      <pubDate>Mon, 10 Mar 2008 08:00:00 UT</pubDate>
      <category>Spansion</category>
      <link>http://www.electronicstalk.com/news/ssi/ssi138.html</link>
    </item>
    <item>
      <title>Flash drives boost industrial storage</title>
      <description>ATA solid-state storage devices operate over industrial temperature ranges, making them compelling options for industrial applications operating in harsh environments</description>
      <pubDate>Tue, 26 Feb 2008 08:00:00 UT</pubDate>
      <category>Silicon Storage Technology</category>
      <link>http://www.electronicstalk.com/news/sor/sor126.html</link>
    </item>
    <item>
      <title>DDR2 modules promise greater stability</title>
      <description>Dual-channel modules are perfect for memory-hungry operating systems, professional grade application software and the latest gaming needs.</description>
      <pubDate>Mon, 25 Feb 2008 08:00:00 UT</pubDate>
      <category>PQI Europe</category>
      <link>http://www.electronicstalk.com/news/pqi/pqi102.html</link>
    </item>
    <item>
      <title>Big NAND Flash shrinks to 43nm process</title>
      <description>New 16Gbit products have a chip area less than 70% that of same-density NAND Flash memories fabricated with 56nm process.</description>
      <pubDate>Fri, 08 Feb 2008 08:00:00 UT</pubDate>
      <category>Toshiba Electronics Europe</category>
      <link>http://www.electronicstalk.com/news/tos/tos370.html</link>
    </item>
    <item>
      <title>Flash/RAM combinations provide speed boost</title>
      <description>The products in the 34WA series use a 6 x 8 x 1mm semiconductor package, making them the smallest address/data bus multiplex combination memory devices available on the market today. </description>
      <pubDate>Tue, 05 Feb 2008 08:00:00 UT</pubDate>
      <category>Silicon Storage Technology</category>
      <link>http://www.electronicstalk.com/news/sor/sor125.html</link>
    </item>
    <item>
      <title>SoC platform allows performance tuning</title>
      <description>The FlashPoint platform uses a sophisticated design configuration engine that enables the system to be tuned for optimal performance</description>
      <pubDate>Tue, 29 Jan 2008 08:00:00 UT</pubDate>
      <category>Denali Software</category>
      <link>http://www.electronicstalk.com/news/deo/deo122.html</link>
    </item>
    <item>
      <title>Processor companion brings more to the party</title>
      <description>Companion devices with up to 256Kbit of ferroelectric RAM include a more efficient trickle charger and a real-time clock that requires only a standard 12.5pF external watch crystal.</description>
      <pubDate>Mon, 21 Jan 2008 08:00:00 UT</pubDate>
      <category>Ramtron International</category>
      <link>http://www.electronicstalk.com/news/ram/ram166.html</link>
    </item>
    <item>
      <title>Memory modules embed Flash with USB</title>
      <description>64Mbyte to 16Gbyte 10-pin eUSB drives deliver high performance, reliability, advanced ECC and wear levelling for embedded and enterprise systems OEMs.</description>
      <pubDate>Thu, 10 Jan 2008 08:00:00 UT</pubDate>
      <category>Viking InterWorks</category>
      <link>http://www.electronicstalk.com/news/vik/vik103.html</link>
    </item>
    <item>
      <title>Seminar to put FRAM on automotive map</title>
      <description>FRAM's fast write time and high endurance allows automotive navigation systems to quickly and continuously capture dynamic information without the risk of wearing out the memory.</description>
      <pubDate>Thu, 03 Jan 2008 08:00:00 UT</pubDate>
      <category>Ramtron International</category>
      <link>http://www.electronicstalk.com/news/ram/ram165.html</link>
    </item>
    <item>
      <title>Tunnel layer to boost future Flash densities</title>
      <description>Elemental technology opens the way for memory devices with densities of over 100Gbit in the 10nm generation, which lies four generations ahead.</description>
      <pubDate>Fri, 21 Dec 2007 08:00:00 UT</pubDate>
      <category>Toshiba Electronics Europe</category>
      <link>http://www.electronicstalk.com/news/tos/tos367.html</link>
    </item>
    <item>
      <title>Solid-state drives use MLC NAND Flash</title>
      <description>By applying MLC technology, Toshiba has realised a 128Gbyte density in a 1.8in form factor.</description>
      <pubDate>Wed, 19 Dec 2007 08:00:00 UT</pubDate>
      <category>Toshiba Electronics Europe</category>
      <link>http://www.electronicstalk.com/news/tos/tos366.html</link>
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