Leadless FET improves basestation performance
An
Avago Technologies product story
Edited by the Electronicstalk editorial team
Nov 8, 2002
Agilent Technologies has developed a miniature enhancement-mode pseudomorphic high electron mobility FET that combines exceptional RF performance, power efficiency and reliability.
Agilent Technologies has developed a miniature E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) field effect transistor (FET) that combines exceptional RF performance, power efficiency and reliability in a low-cost, highly reliable 2.0 x 2.0 x 0.75mm leadless plastic chip carrier package.
The new FET, which features third-order output intercept point (OIP3) of +42dBm, is ideally suited to meet the needs of next-generation 2.5G and 3G basestations, which demand very high linearity for accurate signal transmission and high transmission power levels with minimum electrical power consumption and component heat generation.
The Agilent ATF-521P8 E-pHEMT FET offers performance optimised for the second and third stages of front-end low noise amplifiers (LNAs), and driver or predriver amplifiers in cellular basestations in the 900MHz, 1.9GHz and 2.1GHz frequency bands.
It is also ideal for fixed wireless, WLAN and other applications calling for high performance in the 50MHz to 6GHz frequency range.
The single supply voltage feature eliminates the need for the second supply voltage required for HBT (heterojunction bipolar transistor) and conventional PHEMT devices.
Compared with competing GaAs HBT, MESFET and HFET devices, the ATF-521P8 offers an unbeatable combination of low cost and low bias voltage combined with industry-leading noise performance and the industry's highest linearity.
At 2GHz, the ATF-521P8 provides a linear power output (power output at 1dB gain compression - P1dB) of +26.5dBm, combined with output linearity (OIP3) of +42dBm, operating at 4.5V, 200mA.
It features very high reliability with a predicted point MTTF (single-point mean time to failure) of over 300 years at a mounting temperature of +85C.
The ATF-521P8 E-pHEMT FET is housed in the compact 2.0 x 2.0 x 0.75mm 8-pad industry-standard leadless plastic chip carrier JEDEC DRP-N LPCC package.
The package's lead-free backside metallisation provides excellent thermal dissipation as well as visual evidence of solder reflow.
The transistor is qualified to the moisture sensitive level one (MSL-1) classification of JEDEC standard J-STD-020, which indicates unlimited shelf life when stored at standard temperatures in an uncontrolled humidity environment and resistance to moisture-induced damage during reflow soldering processes.
The Agilent ATF-521P8 is available now through Agilent's worldwide distribution partners.
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