Single-voltage FET simplifies wireless designs

Agilent Technologies has released the second in its series of single-voltage E-pHEMT field effect transistors in miniature leadless chip carrier packages designed for wireless applications up to 6GHz.

Agilent Technologies has released the second in its series of single-voltage E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) field effect transistors (FET) in the miniature leadless chip carrier package, designed for wireless applications up to 6GHz.

The ATF-531P8 E-pHEMT FET features a combination of industry-leading performance features, including 0.6dB noise figure with +38dBm third-order output intercept point (OIP3) and 4V operation for lower power consumption and reduced heat generation.

It is ideal for first- and second-stage front-end LNAs, and for use in radio cards, PAs, cellular basestations, fixed wireless and WLANs, and other high performance applications in the 50MHz to 6GHz range.

Agilent remains the industry's only supplier of E-pHEMT devices that feature single-voltage operation.

With single-voltage operation, high-power efficiency and superior RF performance, Agilent's new E-pHEMT devices are the logical choice to replace both single-voltage HBTs that have high noise figure and dual-voltage conventional PHEMT and GaAs HFET (heterostructure FET) devices.

The Agilent ATF-531P8 E-pHEMT FET is specified for operation in 900MHz, 1.9GHz and 2.1GHz cellular/PCS/WCDMA frequency bands as well as for fixed wireless, WLAN and other services operating in the 50MHz to 6GHz frequency range.

Its +24.5dBm linear output power capability (at 1dB gain compression) is the right level for predriver amplifiers.

The Agilent FET is housed in the compact and thermally efficient 2.0 x 2.0 x 0.75mm 8-pad industry-standard leadless plastic chip carrier JEDEC DRP-N LPCC package.

It features very high reliability with a predicted point MTTF (single-point mean time to failure) of over 300 years at a mounting temperature of +85C.

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