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FET shrinks to PLCC to save wireless space

An Avago Technologies product story
Edited by the Electronicstalk editorial team Jan 23, 2003

The latest E-pHEMT FET from Agilent Technologies features the highest power output, dynamic range and power-added efficiency to date in a miniature PLCC for wireless applications up to 6GHz.

The latest E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) FET from Agilent Technologies features the highest power output, dynamic range and power-added efficiency to date in the miniature leadless plastic chip carrier package for wireless applications up to 6GHz.

At 2GHz, the single-voltage operation Agilent ATF-511P8 E-pHEMT FET features +30dBm output power at 1dB gain compression, +41.7dBm third-order output intercept point (OIP3) and 69% power-added efficiency.

These industry-leading features combine with a noise figure of 1.4dB and 4.5V operation.

The device is specified for operation in 900MHz, 1.9GHz and 2.1GHz cellular/PCS frequency bands as well as for fixed wireless, WLAN and other services operating in the 50MHz to 6GHz frequency range.

And its miniature size saves valuable printed circuit board space.

The ATF-511P8 is an ideal solution for driver or pre-driver amplifier applications as well as Q2 and Q3 stages for front-end low-noise amplifiers in cellular/PCS/WCDMA and GSM/EGSM wireless basestations.

It is also an excellent choice as a driver for transmitters in wireless LAN, wireless local loop and multichannel multipoint distribution system/wireless cable applications.

Agilent remains the industry's only supplier of E-pHEMT devices that feature single-voltage operation.

With single-voltage operation, high-power efficiency and superior RF performance, Agilent's new E-pHEMT devices are the logical choice to replace both single-voltage HBTs that have high noise figure and dual-voltage conventional PHEMT and GaAs HFET devices.

The ATF-511P8 E-pHEMT FET is housed in the compact 2.0 x 2.0 x 0.75mm 8-pad industry-standard leadless plastic chip carrier JEDEC DRP-N LPCC package.

The FET features very high reliability with a predicted (single) point MTTF of over 300 years at a mounting temperature of +85C.

The Agilent ATF-511P8 is immediately available through Agilent's worldwide distribution partners.

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