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Product category: Analogue and Mixed Signal ICs
News Release from: Avago Technologies | Subject: ATF-58143
Edited by the Electronicstalk Editorial Team on 06 May 2003

Single-voltage transistor simplifies
basestations

Agilent Technologies has a new high-linearity E-pHEMT FET for low-noise high-dynamic-range operation in cost-sensitive wireless infrastructure applications between 450MHz and 6GHz.

Agilent Technologies has a new high-linearity E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) FET for low-noise high-dynamic-range operation in cost-sensitive wireless infrastructure applications between 450MHz and 6GHz At 3V, 30mA and 2GHz, the single-voltage Agilent ATF-58143 E-pHEMT FET features 0.5dB noise figure with +16.5dB associated gain, combined with +30.5dBm third-order output intercept point (OIP3) and +16.5dBm linear output power (1dB gain compression)

It is ideal for the first and second stages of front-end LNAs (low-noise amplifiers) in cellular/PCS/WCDMA basestation, wireless local loop, fixed wireless access and other high-performance applications that operate between 450MHz and 6GHz.

The ATF-58143 delivers high linearity of 30.5dBm OIP3 at low power consumption of only 30mA at 3V, which reduces heat generation in today's compact equipment designs.

Single-voltage operation also eliminates the need for voltage inverter circuitry or dual-voltage supplies.

Agilent remains the industry's only supplier of E-pHEMT devices that feature single-voltage operation, which greatly simplifies voltage supply design.

The single 3V supply voltage makes this new Agilent E-pHEMT FET the logical choice to replace single-voltage HBT (heterojunction bipolar transistor), and dual-voltage conventional PHEMT and GaAs HFET (heterostructure FET) devices.

The ATF-58143 E-pHEMT FET is housed in the miniature 2.0 x 2.1mm SOT-343 package, and is immediately available through Agilent's direct sales channel and worldwide distribution partners. Request a free brochure from Avago Technologies ...

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