Broadband amps span comms applications

The ABA series of low-cost silicon RFIC amplifiers are suitable for a wide range of IF and buffer stages.

The ABA series of low-cost silicon RFIC amplifiers are suitable for a wide range of IF and buffer stages in DBS low-noise block down convertors (LNBs), cable television distribution and cable modems, GSM/CDMA radio cards, microwave links, fibre-optic systems and many other communications applications.

Two of the new RFIC amplifiers feature single-supply 3V operation for higher efficiency and lower power dissipation.

The SOT-363 packaged ABA-31563, ABA-32563 and ABA-54563 from Agilent's Semiconductor Products Group offer greater power output capability from amplifier stages at higher frequencies, increasing linearity, and higher drive levels for power amplifiers in high-performance wireless applications.

The amplifiers now offer competitive noise figures with linear output power levels ranging from +2.2 to +16.1dBm, and third-order output intercept points from +13.1 to +27.8dBm.

Like the previous ABA series RFICs, the new amplifiers feature unconditional stability combined with input and output VSWRs of less than 1.5, and internal input and output 50ohm matching, making them easy to integrate into a variety of circuit designs.

The 3V ABA-31563 provides an operating frequency range of DC to 3.5GHz.

At 2GHz, it offers a small-signal gain of 21.5dB, linear output power (P1dB) of +2.2dBm, +13.1dBm output third-order intercept point (OIP3) and 3.8dB noise figure.

The 3V ABA-32563 is specified for operation from DC to 2.5GHz.

At 2GHz, it features 19dB gain, +8.4dBm P1dB, +19.5dBm OIP3 and 3.5dB noise figure.

The 5V ABA-54563 is specified for operation from DC to 3GHz.

At 2GHz, it features 23.1dB gain, +16.1dBm P1dB, +27.8dBm OIP3 and 4.4dB noise figure.

These RFICs are fabricated using Agilent's proven and extremely reliable HP-25 silicon bipolar process with 25GHz fT and 30GHz fmax.

This technology uses a double-diffused single polysilicon process with self-aligned submicron emitter geometry and is capable of simultaneous high fT and high NPN breakdown (25GHz fT at 6V breakdown voltage).

The process combines industry-standard device oxide isolation and submicron aluminium multilayer interconnect to achieve superior performance, high uniformity and proven reliability.

The Agilent ABA-31563, 32563 and 54563 are available now through Agilent's direct sales channel and worldwide distribution partners.

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