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Transistors boost basestation amplification

An Avago Technologies product story
Edited by the Electronicstalk editorial team Mar 15, 2005

Agilent Technologies has added two new members of its family of high-linearity E-pHEMT FETs in the industry-standard 4.5 x 4.1 x 1.5mm SOT-89 surface-mount package.

Agilent Technologies has added two new members of its family of high-linearity E-pHEMT FETs in the industry-standard 4.5 x 4.1 x 1.5mm SOT-89 surface-mount package.

By using an industry-standard package, Agilent's new ATF-52189 and ATF-53189 and previously introduced ATF-50189 single-voltage E-pHEMT FETs simplify upgrading 50MHz to 6GHz basestations to higher-channel capacity.

The ATF-52189 and ATF-53189, from Agilent's Semiconductor Products Group, are designed for use in the transmitter power amplifiers and receiver low-noise amplifiers in cellular and PCS basestations, low-earth-orbit satellite systems, terrestrial multichannel multipoint distribution systems (MMDSs) and other communications applications operating from 450MHz to 6GHz.

The 42dBm third-order output intercept point (OIP3) at 2GHz of the ATF-52189 results in an efficient amplifier capable of handling a large number of voice and data channels.

At 2GHz, its other specifications include typical 27dBm linear output power (P1dB), 16dB gain and 55% power-added efficiency (PAE), combined with a 1.5dB noise figure.

Typical operating bias is 4.5V at 200mA.

It is particularly well-suited for use as a medium-power, high-linearity transmitter driver or predriver amplifier.

The ATF-53189 features an even lower 0.85dB noise figure, combined with a 40dBm OIP3, 23dBm P1dB, 15.5dB gain and 46% PAE.

Typical operating bias is 4.0V at 135mA.

This makes it an excellent choice as a low-noise high-linearity amplifier for receiver front-end stages or as a medium-power, high-linearity transmitter driver or pre-driver amplifier.

The ATF-52189 and ATF-53189 are based on the E-pHEMT process, which features excellent performance uniformity and a point mean-time-to-failure (MTTF) of greater than 300 years.

These devices are supplied in lead-free packaging with a moisture sensitivity level-1 (MSL1) rating.

Agilent remains the industry's only supplier of E-pHEMT devices featuring single-voltage operation.

With single-voltage operation, high efficiency and superior RF performance, Agilent's E-pHEMT devices are the logical choice to replace both single-voltage heterojunction bipolar transistors, with their higher noise figures, and dual-voltage conventional PHEMT and GaAs eterostructure FET devices.

Availability The Agilent ATF-52189 is available now through Agilent's direct sales channel and its worldwide distribution partners.

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