Product category:
Communications ICs (Wireless)
News Release from: Avago Technologies | Subject: ALM-1222 and ALM-1322
Edited by the Electronicstalk Editorial
Team on 06 April 2006
Balanced amplifier modules reduce system
noise
Very-low-noise high-linearity high-gain balanced amplifier modules operate in the 1.8 to 2.2GHz frequency range.
Avago Technologies has introduced a pair of very-low-noise high-linearity high-gain balanced amplifier modules that operate in the 1.8 to 2.2GHz frequency range Housed in the industry's smallest package (5.0 x 6.0 x 1.1mm), they are ideal for diversity antennas, tower-mounted amplifiers (TMAs) and front-end, low-noise amplifiers in macrocell, microcell and picocell cellular basestations and repeaters
This article was originally published on Electronicstalk on 8 Nov 2004 at 8.00am (UK)
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"There is no competition for the combination of noise figure, linearity and extremely compact sise offered by our new balanced amplifier modules", said Ho King-Pieng, Worldwide Marketing Manager for Avago Technologies' Wireless Semiconductor Division.
"These products were designed to satisfy customers' needs well into the future".
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"basestations today require more channels per card and smaller overall form factors, and the rollout of 3G services makes the size constraints and performance requirements even more critical".
Avago's ALM-1222 and ALM-1322 balanced amplifier modules reduce system noise figure and out-of-band frequency response in high signal-level areas.
They are fully matched to 50ohm to simplify system design and minimise the number of external components.
Their extremely small 22-lead multiple-chip-on-board (MCOB) module package significantly reduces PC board dimensions.
The high output power capability of the ALM-1222 also makes it an excellent driver amplifier in cellular infrastructure transmitters.
The ALM-1322 consumes only 35% of the current used by ALM-1222 with lower linearity and output power, but it can be deployed as both an LNA and driver amplifier.
Each amplifier module consists of two branches; each branch consists of one low-noise transistor cascaded with a high-linearity driver transistor to achieve its combination of noise figure, gain and linearity.
Their exceptional noise performance is a result of Avago Technologies' proprietary 0.5um GaAs E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) process.
All matching components are fully integrated within the module, and the 50ohm RF input and output pins are internally AC-coupled.
This makes the modules extremely easy to use, as the only external parts required are DC supply bypass capacitors.
At 2GHz, operating at 5V, 280mA (typical) per section, the Avago ALM-1222 provides 31dB gain, 0.62dB noise figure (NF), 43.7dBm output third-order intercept point (OIP3), +27.5dBm output power at 1dB gain compression (P1dB), and 45dB reverse isolation.
The lower-current ALM-1322 consumes only 100mA (typical) at 5V, making it a good choice for battery-operated applications such as radio cards.
Its performance characteristics at 2GHz, operating at 5V, 100mA (typical) per section are 29.5dB gain, 0.57dB NF, 35.6dBm OIP3, +17dBm P1dB, and 42dB reverse isolation.
Samples and production quantities are available now through Avago's direct sales channel and worldwide distribution partners. Request a free brochure from Avago Technologies ...
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