Product category:
Microprocessors, Microcontrollers and DSPs
News Release from: AMI Semiconductor
Edited by the Electronicstalk Editorial
Team on 20 June 2001
TSMC gives AMI fast route to 0.18-micron
ASICs
AMI Semiconductor will begin offering 0.25 and 0.18-micron ASIC products as early as the third quarter of 2001 by partnering with TSMC, the world's largest dedicated semiconductor foundry.
AMI Semiconductor will begin offering 0.25 and 0.18-micron ASIC products as early as the third quarter of 2001 by partnering with TSMC, the world's largest dedicated semiconductor foundry AMIS will handle the design and verification phases of each project, and work jointly with TSMC to ensure customer satisfaction
This article was originally published on Electronicstalk on 26 Mar 2001 at 8.00am (UK)
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The 0.18-micron designs further extend AMI Semiconductor's leadership position in the FPGA conversion market, and will enable the company to offer higher levels of integration in conversion and prime digital ASICs.
AMIS Vice President of Marketing and Business Development Glenn Fraser cited the foundry agreement with TSMC as a prime example of the company's dedication to its customers' evolving needs.
"Our customers face increasing pressure from end-users who want the latest benefits in new products built with deep-submicron technology at competitive prices", acknowledged Fraser.
"In many cases, that means converting from one of the advanced, high-density FPGAs to a small-geometry ASIC.
The agreement with TSMC extends AMI Semiconductor's ability to continue providing our customers with the best services for high-density FPGA conversions, prime digital ASICs and 0.25-micron mixed-signal devices", continued Fraser.
In its aggressive implementation roadmap, AMIS will deliver 0.25-micron standard cell designs targeting high-performance 2.5V applications based on FPGA-to-ASIC conversions and digital and mixed-signal ASICs in the third quarter.
The 0.18-micron process will be applied to 1.8V FPGA-to-ASIC conversions and digital ASIC applications that are suited for submicron technology.
New designs for 0.18-micron gate arrays and 0.18-micron standard cells are scheduled for the fourth quarter.
With today's announcement, AMIS now offers customers a full range of CMOS integrated circuit manufacturing processes, from legacy designs of 1 micron through submicron (to 0.35 microns) and now into deep-submicron (to 0.18 microns) geometries.
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