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Product category: Analogue and Mixed Signal ICs
News Release from: AMI Semiconductor | Subject: I3T80
Edited by the Electronicstalk Editorial Team on 27 May 2003

Mixed-signal process aids MEMS
interfacing

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BAE Systems has chosen a new high-voltage mixed-signal semiconductor technology to develop an ASIC for use with its next generation of solid-state MEMS gyroscopes.

BAE Systems has chosen a new high-voltage mixed-signal semiconductor technology from AMI Semiconductor (AMIS) to develop an ASIC for use with its next generation of solid-state MEMS (micro-electromechanical system) gyroscopes Developed by the BAE Systems Inertial Systems Division, the new solid-state capacitive gyro sensors offer a compact and inexpensive solution suitable for mass-market applications where the sensing of the change of direction or orientation of the object is needed

AMIS I3T80 mixed signal semiconductor technology is being used to develop a compact and low-cost data-acquisition ASIC that will process the data received from the gyro sensor.

Potential applications for the sensor and ASIC chipset will range from vehicle stability control systems to wheelchairs and model aircraft.

BAE Systems chose the AMIS I3T80 platform following a thorough market evaluation of mixed-signal ASIC suppliers and technologies.

A key reason for choosing the AMIS solution was the ability to create compact, cost-effective ASICs that combine high-speed performance with low-power operation.

Discussing the choice of AMIS I3T80, Mark Bicknell, Senior Supply Chain Manager for the BAE Systems Inertial Systems Division, comments: "We compiled a shortlist of suppliers by conducting a thorough and detailed market evaluation of available mixed signal ASIC technologies.

After extensive auditing of the suppliers on this list we chose AMIS on the basis of the technology, the cost, and the enthusiasm of the company to get involved in this project".

AMI Semiconductor's I3T80 mixed signal technology allows system designers to reduce component count, save space and lower costs by integrating complex digital circuitry, embedded microprocessors and high-voltage functionality into a single, compact IC.

Based on a 0.35-micron process, I3T80 can deliver SoC solutions that offer gate densities of 15,000/mm2 and that can handle voltages up to 80V.

Such devices can incorporate high-voltage circuitry such as motor controller drivers and DC/DC convertors, and high-precision analogue circuits including bandgap filters, ADCs and DACs.

Available IP blocks cover PLLs, USB interfaces, bus protocol controllers and controllers for CAN and LIN connectivity.

Embedded microprocessor options include ARM7 TDMI and 8051 cores.

An embedded Flash module increases system flexibility.

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