Product category:
Power Supply ICs and Controllers
News Release from: AMI Semiconductor | Subject: I2T100 Smart Power
Edited by the Electronicstalk Editorial
Team on 14 April 2005
Smart power ASIC process cuts
on-resistance
AMI Semiconductor has enhanced its I2T100 Smart Power mixed-signal semiconductor technology by significantly reducing transistor on-resistance performance.
AMI Semiconductor has enhanced its I2T100 Smart Power mixed-signal semiconductor technology by significantly reducing transistor on-resistance performance The reduction in on-resistance by up to 25% has allowed AMIS to improve transistor efficiency, enabling higher power capabilities or lower transistor size and facilitating further reductions to the size of mixed-signal ASICs and ASSPs employed in a wide variety of automotive, industrial and computer peripheral applications
This article was originally published on Electronicstalk on 26 Mar 2001 at 8.00am (UK)
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AMI Semiconductor's I2T100 (intelligent interface technology) mixed-signal semiconductor technology includes 40, 60 and 100V high-voltage transistors based on 0.7-micron mixed-mode CMOS technology.
It allows low-, medium- and high-voltage circuitry, high-precision analogue circuitry, nonvolatile memory, and some medium complexity digital circuitry to be integrated into a single IC.
As a result, I2T100 is ideal for automotive, industrial and computer peripheral applications such as sensor interfaces, transceivers and actuators and motor drivers.
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In the latest version of its I2T100 technology, AMIS has been able to reduce the pitch of the most used DMOS transistors by introducing new features in its back-end process.
This has helped to reduce transistor sise for 40V and 60V implementations by approximately 25%.
As a result, the size of mixed-signal ASICs and ASSPs based on I2T100 technology can be reduced without compromising performance.
Alternatively, for an equivalent transistor area, the new version can consume significantly less power.
Embedded power switches, H-bridge circuitry and other applications requiring higher current draw (up to 5A) will benefit most from this new enhanced transistor technology.
"Mixed-signal ASICs and ASSPs are playing an increasingly important role in automotive, industrial and computer peripheral applications", said Bob Klosterboer, Senior Vice President of Integrated Mixed-Signal Products at AMIS.
"These ICs allow OEMs to combine analogue and digital circuitry with high-voltage driver capabilities, minimising component count and simplifying circuit design".
"Now, by further enhancing our I2T technology, we can provide these OEMs with higher levels of performance and efficiency in even smaller IC packages, allowing them to address the size, power and performance challenges of their latest designs".
I2T100 devices are created using two to three metal layers, floating NMOS and PDMOS transistors and low-, medium- and high-voltage bipolar transistors.
The technology allows for integration of medium- and high-resistivity polysilicon resistors, medium- and high-voltage floating capacitors and deep, N+ doped guard rings.
Using the technology, ASICs and ASSPs can integrate low-, medium- and high-voltage circuitry such as motor controller drivers and DC/DC convertors alongside high-precision analogue circuits including bandgap filters, ADCs and DACs.
Availability of a comprehensive family of IP blocks that includes common interfaces and controllers minimises the time-to-market of new designs based on I2T platforms.
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