Nanotech agreement develops power technolgoy

AMI Semiconductor's agreement with IMEC will move, for the first time, part of the AMIS R and D technology into IMEC's premises.

AMI Semiconductor (AMIS), has entered into a new two-year collaboration with IMEC, a nanoelectronic independent research centre, to develop AMI Semiconductor's future Smart Power Technologies.

Under the terms of the agreement, AMIS will develop critical and novel Smart Power processes and devices in IMEC's 200mm facilities and use IMEC's experience in deep submicron process technology.

A team of on-site AMIS engineers will jointly work with IMEC engineers in the IMEC premises in Leuven, Belgium, in close collaboration with the AMIS Smart Power team in Oudenaarde, Belgium.

Christine King, CEO of AMIS, said "This collaborative agreement will allow us to develop our next-generation I4T Smart Power Technology platform while protecting our differentiating and critical IP".

AMIS has collaborated with IMEC on a number of developments during the last twenty years.

The new agreement takes the relationship between the two companies to a new level by moving, for the first time, part of the AMIS advanced technology R and D into IMEC's own premises.

I4T will be the fourth generation of the AMIS Smart Power Technology platform.

This platform allows the integration of high voltage and power functions with dense logic, processors and memories into a single device.

The I4T platform will enable complex system-on-chip (SoC) Smart Power systems for next-generation automotive, power regulation and communications applications.

Gilbert Declerck, the IMEC CEO said: "The new project with AMIS fits IMEC's CMORE program, targeted at R and D for new fabrication processes and device technologies focusing on performance and new functions, rather than further scaling of transistors".

CMORE makes use of IMEC's state-of-the art 200mm processing facility with a 130/90nm CMOS platform technology.

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