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Product category: Lasers
News Release from: Anritsu (UK) | Subject: 1480nm pump laser diode
Edited by the Electronicstalk Editorial Team on 08 May 2001

1480nm pump laser diode for DWDM systems

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Anritsu has introduced a 1480nm pump laser diode offering a minimum in-fibre power of 300mW.

Anritsu has introduced a 1480nm pump laser diode offering a minimum in-fibre power of 300mW The new device addresses the need for higher pump powers in emerging, high-channel-count, dense wavelength division multiplexed (DWDM) transmission systems

Its main applications will be in high-power erbium-doped fibre amplifiers (EDFAs) and in multi-pump combinations for Raman optical amplification sources.

Anritsu has achieved the 300mW output power with a maximum drive current of only 1000mA, a maximum forward voltage of only 2.8V and a 70C operational case temperature.

This low chip power consumption has the added benefit of reducing the laser's "end of life" cooler current requirements.

The technology to realise high power chips now also allows for the development of low cost, coolerless 1480nm pumps offering up to several tens of milliwatts for metro applications.

Multiple-laser-diode Raman optical sources are created by combining several fibre Bragg grating stabilised pumping lasers, typically using four or five wavelengths between 1400 and 1500nm.

The distribution of the pumping wavelengths is critical in achieving a flattened gain response for C- and L-Band optical amplification.

This new device complements Anritsu's existing four families of 1480nm pump lasers rated at drive currents of 500, 600, 700 and 800mA.

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