Product category:
Memory Devices and Modules
News Release from: Atmos Corp
Edited by the Electronicstalk Editorial
Team on 12 April 2002
TSMC to port Atmos memories down to 90nm
Taiwan Semiconductor Manufacturing Company is to develop, verify and qualify Atmos SoC-RAM CMOS embedded memory on its Nexsys 90nm process technology.
Taiwan Semiconductor Manufacturing Company is to develop, verify and qualify Atmos SoC-RAM CMOS embedded memory on its Nexsys 90nm process technology The dense CMOS planar bit-cells will enable integration of up to twice the memory of standard SRAM, while minimising leakage challenges arising in very deep submicron processes
This article was originally published on Electronicstalk on 27 Mar 2001 at 8.00am (UK)
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The Atmos SoC-RAM ML family of embedded memory macrocells enables embedded memories up to 128Mbit with bus widths up to 1Kbit, throughput up to 400Gbit/s and minimal soft error susceptibility.
Under a new agreement, TSMC will fabricate an Atmos SoC-RAM embedded memory test chip.
Atmos, in turn, will deliver front-end views of the fully compiled embedded memory for TSMC's 90nm process by the summer of 2002.
The 90nm SoC-RAM will then join Atmos' silicon-proven planar macrocell family, which includes compiled memory for TSMC's 0.13 and 0.18-micron processes.
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"At the 90nm process node, designers need significant IP support to meet their requirement for more productive system-on-chip design", said Genda Hu, vice president of marketing at TSMC.
"By teaming with Atmos to offer their high-performance CMOS embedded memory and the SoC-RAM compiler at the early stage of our Nexsys 90nm process implementation, we are delivering on our commitment to facilitate third-party-developed services necessary for fast, efficient SoC design".
Using this technology, designers can incorporate large amounts of high-density embedded memory in their Nexsys-based SoC products.
With Atmos SoC RAM, they may safely embed up to 128Mbit of memory into SoC macrocell designs, making it an attractive option for applications demanding availability of very high-density memory early in each new technology node.
The 90nm process technology will enable unprecedented performance in memory-intensive applications, such as high-speed networking, DSP, convergence products (such as mobile multimedia devices), and digital consumer products.
The SoC-RAM compiler simplifies integration of these memories by enabling rapid evaluation and what-if scenarios early in the SoC design process.
"The use of dense embedded memory is rising almost exponentially as SoC developers realise that embedding memory on chip is required to meet their combined performance and cost goals", added Al Hawtin, Atmos VP Marketing and Sales.
"With SoC-RAM, Atmos continues to innovate a high-density memory solutions using planar bit-cell technology that drops seamlessly into TSMC's 90nm logic process.
As the only compiled CMOS high-density embedded memory, SoC-RAM enables a fully optimised solution tailored specifically to each SoC application".
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