H18 CMOS process technology ready for distribution

Austriamicrosystems has announced the availability of H18, a 0.18um high-voltage CMOS process technology.

Jointly developed with IBM, H18 is the sixth generation of high-voltage CMOS technologies developed at Austriamicrosystems and is now ready to be distributed.

The H18 process offers high integration density enabling SoC applications (System-on-Chip) and best-in-class power-on resistance (Rdson), which directly results in a reduced silicon area.

Additionally, the process allows the integration of 1.8V, 5V, 20V and 50V devices on a single chip without any process modifications.

Process features include a Shottky barrier diode, high-resistive and precision metal-insulator-metal (MIM) capacitors and up to seven metal layers.

Only a few mask level adders on top of the H18 CMOS-base process are required to implement high-voltage capabilities.

This makes the H18 technology suitable for fabless design houses and IDMs creating power management products, display drivers, sensors, capacitive actuators, plus printer and MEMS driver ICs.

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