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News Release from: Bookham | Subject: Uncooled InP buried-heterostructure lasers
Edited by the Electronicstalk Editorial
Team on 07 March 2003
New process boosts laser yields
A novel in-situ etch and regrowth process for uncooled InP buried-heterostructure lasers results in 50% lower rates of burn-in degradation than can be obtained by current standard processes.
Later this month at OFC 2003, Bookham Technology will reveal a novel in-situ etch and regrowth process for uncooled InP buried-heterostructure lasers that results in 50% lower rates of burn-in degradation than can be obtained by current standard processes The times-two burn-in improvement is extremely promising for increasing the long-term reliability of the devices, which also exhibit 20% lower threshold currents
This article was originally published on Electronicstalk on 28 Feb 2008 at 8.00am (UK)
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The etching and regrowth required to make buried heterostructures can leave defects or introduce surface contamination on the mesa sidewalls.
When the buried heterostructure is subsequently regrown on the material surface, any etch damage or impurities that remain at the surface can introduce a leakage current that increases the laser threshold current during device operation and degrades the laser's long-term reliability.
This effect is particularly severe for AlGaInAs, a new laser materials system of growing industry interest because of its performance characteristics and potential to operate at higher temperatures than standard InP.
In principle, this would allow more compact devices to be fabricated as less passive cooling is needed.
Unfortunately, AlGaInAs oxidises rapidly after etching, making the etched surfaces highly vulnerable to damage and contamination.
Bookham's unique in-situ etching process eliminates the problem of postetching surface damage or contamination by performing the etching step within the MOCVD reactor itself.
Overgrowth is performed immediately on the clean freshly etched surface, thereby preventing the surface contaminations and oxidation that can occur in the standard process of using an external etcher to which the material has to be transferred at the risk of damage and contamination.
"The in-situ process will improve even further the outstanding reliability of our current InP laser design, since all material systems are subject to some extent to the surface defects/contaminations of the conventional process for buried heterostructures", says Karin Hinzer, Advisor, New Materials and joint author of the OFC paper describing the process.
"But reliability is a very big issue for AlGaInAs right now because the reliability of existing uncooled InP devices from vendors like Bookham is just so good - and getting better.
So the results of the new process suggest that AlGaInAs could have similar reliability to InP if AlGaInAs technology goes mainstream in the future".
The paper details how InP 2.5Gbit/s directly modulated lasers have been grown and fabricated by the process, and also how two formulations of AlGaInAs buried heterostructures have been grown.
The InP buried-heterostructure lasers consisted of an active layer with six compressively strained 6nm quantum wells in a separate confinement heterostructure, with a 1541nm target wavelength gain-coupled grating etched above the quantum-well stack.
The final structures for both InP and AlGaInAs showed smooth planes and excellent surface morphology.
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