Product category:
Light Emitting Diodes (LEDs)
News Release from: Bookham
Edited by the Electronicstalk Editorial
Team on 28 February 2005
InP chip developments to be divulged
Bookham will outline for the first time its end-to-end strategy for indium phosphide (InP) chip development at OFC/NFOEC 2005.
Bookham will outline for the first time its end-to-end strategy for indium phosphide (InP) chip development at OFC/NFOEC 2005 Through a series of technical papers to be given at the conference, and at its stand (2213), Bookham will reveal a strategy that it believes differentiates the company from its competitors, allowing a world-class product roadmap, reducing cost for customers and increasing the functionality and performance of its current products
This article was originally published on Electronicstalk on 28 Feb 2008 at 8.00am (UK)
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"We have developed an extensive product portfolio based on our leading InP technology", said Andy Carter, VP of Research and Development at Bookham.
"Our technical strength, outlined in the papers we are presenting at OFC/NFOEC, is such that customers can work with us from the initial development stages and benefit from our in-depth knowledge, total coverage and cost-effective chips that work together".
"This expertise is underpinned by our internal automated 3in InP fabrication facility, which enables best in class manufacturing and high volume production".
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The Bookham technical and invited papers will cover several topics, including lasers, modulators, modules, applications and WDM filters.
A key theme will be tunability, modulation and cost reduction in the metro and long haul markets as three of the Bookham papers will show: DFB equivalent performance in Bookham's monolithic InP tunable laser, using the digital supermode distributed Bragg reflector (DSDBR) design, with full compliance at the transponder level to Sonet switching and restoration times, together with full dark tuning and excellent linewidth and side mode suppression; high yield InP 10Gbit/s modulator designs, with dispersion limited reach superior to negative chirp lithium niobate modulators in a chip length of less than 4mm; and demonstration of this InP modulator platform with full band wavelength tunability and dispersion tolerant coding such as optical duobinary and PSK (phase shift key).
A key element in the current Bookham portfolio is the family of Compact InP MZ based transmitters, which are established as a solution to 10Gbit/s overlay on 2.5G routes, as the products can support dispersion of up to 1600ps/nm in a conventional butterfly package.
These products are supplied with fixed frequency DFB lasers.
"The InP modulator platform is critical in our product strategy and technology roadmap", said Andy Carter.
"It gives us major advantages over lithium niobate modulators, in terms of footprint, cost, performance and manufacturability".
"Establishing and demonstrating designs for full band tunability with no loss in performance is a major step forward".
Bookham will also present technical papers on its market leading thin film filters and its new EML (electroabsorption modulated laser) platform, which is key to cost reduction in the "pluggables" arena.
This new, highly manufacturable, platform is shown to give industry-leading reach and temperature performance.
These developments give Bookham complete coverage of the key optical chips at the core of their transmitter/ receiver products.
In addition to the above, Bookham manufactures class leading 2.5 and 10Gbit/s pin and avalanche photodiodes (APDs), monitor diodes, continuous wave (CW) lasers, long reach directly modulated lasers, pump and industrial lasers.
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