nvSRAM offers short access times

Cypress's S8 0.13um SONOS (silicon oxide nitride oxide silicon) embedded nonvolatile memory technology enables greater densities and improved access times and performance.

Cypress Semiconductor has introduced a 4Mbit nonvolatile static random access memory (nvSRAM).

The new device features access times as low as 15ns, infinite read, write and recall cycles, and 20-year data retention, making it ideal for applications requiring continuous high-speed writing of data and absolute non-volatile data security including RAID applications, harsh environment industrial controls, and data logging functions in automotive, medical and data communications systems.

The nvSRAMs reduce board space and design complexity compared to battery-backed SRAMs, and are more economical and reliable than magnetic (MRAM) or ferroelectric (FRAM) memories.

The 4Mbit nvSRAMs are the first manufactured on Cypress's S8 0.13um SONOS (silicon oxide nitride oxide silicon) embedded nonvolatile memory technology, enabling greater densities and improved access times and performance.

Cypress will use the S8 technology in next generation PSoC mixed-signal arrays, OvationONS laser navigation sensors, programmable clocks and other products.

Sonos is compatible with standard CMOS technologies and offers numerous advantages including high endurance, low power and radiation hardness.

In addition, Sonos provides a more robust, manufacturable and cost-effective solution than other embedded nonvolatile memory technologies.

"nvSRAM melds two of Cypress's traditional strengths, SRAM and nonvolatile memory, into a monolithic, high-performance solution required by many applications", said Robert Dunnigan, Vice President of Non-Volatile Memory Business Unit at Cypress.

"In addition, we offer the market's broadest distribution and best support for these products".

Paul Keswick, Cypress's Executive Vice President of New Product Development, added: "We have turned our internal resources towards value-added, proprietary processes such as S8 that yield market-differentiated solutions".

"A number of important new products are under development using this process".

The 4Mbit nvSRAM is available in either a 512K x 8bit (CY14B104L) or 256K x 16bit (CY14B104N) configuration.

The devices are RoHS-compliant and directly replace SRAM, battery-backed SRAM, EPROM and EEPROM devices, offering reliable nonvolatile data storage without batteries.

Data transfers from the SRAM to the device's nonvolatile elements take place automatically at power down.

On power up, data is restored to the SRAM from the nonvolatile memory.

Both operations are also available under software control.

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