Product category:
Discrete Power Devices
News Release from: Digi-Key Corporation | Subject: CRF24010 and CRF24060
Edited by the Electronicstalk Editorial
Team on 05 March 2008
Transistors support wide bandwidths
SiC MESFETs are optimised for applications such as wideband military communications, secure communications, Class A and A/B amplifiers, TDMA, EDGE, CDMA, W-CDMA broadband amplifiers and WiMAX.
Cree's silicon carbide (SiC) Metal-Semiconductor Field-Effect Transistors (MESFETs) are being distributed by Digi-Key Cree's 10W CRF24010 and 60W CRF24060 are un-internally matched SiC RF transistors, capable of supporting extremely wide operational bandwidths
SiC has a higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity than either silicon or gallium arsenide.
SiC MESFETs offer greater efficiency, greater power density and wider bandwidths.
SiC MESFETs are optimised for applications such as wideband military communications, secure homeland defence communications, Class A and A/B amplifiers, TDMA, EDGE, CDMA, W-CDMA broadband amplifiers and WiMAX.
Also available from Digi-Key are the CRF24010-TB and CRF24060-TB demonstration test fixtures.
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