Product category:
Discrete Power Devices
News Release from: Dynex Semiconductor | Subject: DIM200PHM33
Edited by the Electronicstalk Editorial
Team on 14 March 2001
Smaller IGBT package has 6000V isolation
Dynex Semiconductor has released a new compact IGBT module package designed for applications up to 3300V including traction auxiliaries and specialist motor drives.
Dynex Semiconductor has released a new compact IGBT module package designed for applications up to 3300V including traction auxiliaries and specialist motor drives The new P package has a 6000V isolation rating and is based on an established industry footprint with baseplate dimensions of 140 ? 73mm
This article was originally published on Electronicstalk on 19 Mar 2001 at 8.00am (UK)
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Fast-recovery diode modules in ones and twos
Dynex Semiconductor announces the release of a new family of high-voltage fast-recovery diode (FRD) modules for use in applications including traction and industrial motor drives.
The new product group is particularly suitable for applications where small physical size is important.
The first product available using the P outline is the Powerline 200A, 3300V IGBT module (the DIM200PHM33).
This module is a half-bridge switch containing non-punch-through (NPT) DMOS IGBT die with full 10us short-circuit withstand capability.
The long-term reliability and enhanced thermal performance are achieved through the use of aluminium nitride substrates mounted on a metal matrix compound baseplate.
The same package with a 100A half-bridge is planned for release shortly.
In due course, the P outline will be applied across the IGBT Powerline variants as well as the fast-recovery diode variants at 3300V.
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