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Product category: Discrete Power Devices
News Release from: Dynex Semiconductor | Subject: 3300V IGBTs
Edited by the Electronicstalk Editorial Team on 14 August 2001

Low thermal resistance for high-power
IGBTs

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Dynex Semiconductor has released a new range of high-power 3300V IGBTs packaged in industry standard isolated module outlines.

Dynex Semiconductor has released a new range of high-power 3300V IGBTs packaged in industry standard isolated module outlines Dynex's IGBTs were originally developed to meet the extremely demanding electrical and environmental standards of the railway traction industries and so are ideal for industrial motor drives, power supplies and power conversion products

The new high-power versions have already been ordered in prototype quantities and are now being released into production.

"This product release is in line with the product development roadmap we put together at the beginning of the year.

We are continuing to make progress with new product launches where we are seeing the best long term market demand for our technologies", said Dr Paul Taylor, Chief Technology Officer.

Following on from the release earlier this year of the compact P and L outline packages, the N and E packages use similar metal matrix base plates and aluminium nitride substrates to achieve improved thermal cycling performance and low thermal resistance.

The first products to be released are a 3300V, 800A single-switch IGBT module with a 130 x 140mm footprint, and a 3300V, 1200A single-switch IGBT module with a 140 x 190mm footprint.

The packages achieve 6kV isolation and the IGBT switches have a full 10us short-circuit withstand rating.

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