Low losses for 1200V IGBT process technology

Dynex Semiconductor has developed a new 1200V low-loss IGBT process technology and associated family of IGBT modules.

Dynex Semiconductor has developed a new 1200V low-loss IGBT process technology and associated family of IGBT modules.

The new module family replaces the 1200V GP series.

Fabricated in Dynex's in-house wafer diffusion and module assembly facility, using low-loss NPT float zone silicon, the IGBTs have full 10us short circuit withstand capability making them suitable for use in motor drives and other rugged applications.

The range offers single, half bridge, dual and chopper variants, with current ratings from 200 to 2400A.

In support of maximum thermal cycling performance most modules in the range are offered with MMC baseplates and AlN substrates as standard.

The exceptions are the 200A half bridge and 400A single, which have copper baseplates with alumina substrates.

Isolation rating for all products is 4.0kV.

The 1200V IGBTs complement the recently released 1200V Dynex fast recovery diode module (DFM) range.

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