Alliance focuses on 45nm logic structures

Epion Corporation has entered into a formal joint development programme with the world's number one supplier of microcontrollers.

Leading gas cluster ion beam (GCIB) developer Epion Corporation has entered into a formal joint development programme with one of the world's leading semiconductor system solutions providers for the mobile, automotive and PC/AV markets and world's number one supplier of microcontrollers.

The development programme will use Epion's GCIB technology to develop advanced processes for CMOS logic structures for 45nm and smaller devices.

Epion's nFusion doping system has been installed in the customer's Japanese plant, which will allow the device manufacturer to evaluate the technical and production capabilities of the nFusion System, providing valuable feedback to Epion, Commenting on the partnership, Epion Chairman and CEO Allen Kirkpatrick said: "This joint development programme will clearly demonstrate that Epion's new GCIB nFusion technology is ready not only to meet the demands of today's semiconductor device manufacturing but that it is also capable of addressing the difficult challenges associated with aggressive future device scaling of the semiconductor industry".

"For ultrashallow junctions, our infusion system provides sub-10nm dopant profiles at high throughput without the need for a pre-amorphising implant".

"Work is also well under way to utilise our shallow Ge doping capability to provide a low cost way to improve channel mobility".

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