Product category:
Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: FDB06AN08A1 UltraFET
Edited by the Electronicstalk Editorial
Team on 12 April 2001
MOSFET is ready for high-voltage car
batteries
The new FDB06AN08A1 UltraFET trench MOSFET from Fairchild Semiconductor is designed for 42V automotive battery applications requiring full device capability at low gate drive voltages.
The new FDB06AN08A1 UltraFET trench mosfet from Fairchild Semiconductor is designed for high-current starter/alternator, electronic power steering, electric braking, valve timing and other 42V automotive battery applications requiring full device capability at low gate drive voltages Employing Fairchild's patented, advanced trench topology, the FDB06AN08A1 die is more than 20% smaller than those of competing technologies
This article was originally published on Electronicstalk on 28 Feb 2001 at 8.00am (UK)
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This is particularly significant in the starter/alternator application, where of a large number of devices must be paralleled to accommodate starting currents of up to 1500A.
As mechanical systems are replaced with electronics, the increase in automobile power requirements has prompted the transition from the traditional 12V to a 42V battery to limit current requirements and control wire size and cost.
This new 75V mosfet is designed specifically for these systems that will begin to appear in new car models as early as 2003.
The FDB06AN08A1 N-channel trench mosfet features ultra-low RDS(on) (6.3mohm, max at room temperature), 75V breakdown voltage, 175C maximum junction temperature, an internal gate resistor and unclamped inductive surge capability for single (1200mJ at 75A) and repetitive pulses.
Additionally, the die size of the FDB06AN08A1 leaves a substantial amount of D2-Pak (TO263) space available, allowing for die size flexibility and the potential to further lower the RDS(on) for the same package size.
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