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Product category: Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: 30V P-channel PowerTrench MOSFETs
Edited by the Electronicstalk Editorial Team on 06 June 2001

P-channel MOSFETs handle higher input
voltages

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New 30V P-channel PowerTrench MOSFET technology from Fairchild Semiconductor features enhanced rugged-gate technology with 25V gate-to-source maximum rating.

New 30V P-channel PowerTrench mosfet technology from Fairchild Semiconductor features enhanced rugged-gate technology with 25V gate-to-source maximum rating, making it ideal for operation in battery charger and disconnect applications for notebook computers and other portable electronics In these applications, input voltages typically are as high as 22V

Prior to this innovation, P-channel mosfet maximum gate ratings were no higher than 20V.

Because of this, a separate gate-protection zener diode was needed with the mosfet.

The higher VGS(max) rating eliminates the need for this added component for high-side applications.

The new P-channel mosfet also features lower RDS(on), lower gate charge, and faster switching characteristics than comparable mosfets.

These characteristics make them ideal for battery charging and other DC/DC applications.

Jon Klein, Director of Business Development for Fairchild said, "The FDS6679, for example, features the lowest RDS(on) 30V P-Channel in an SO-8 package available in the industry.

These mosfets are easier and safer to drive, resulting in higher overall efficiencies for DC/DC power supply designs".

Besides notebook charger circuits and battery power management (charger and battery disconnect), the new P-channel family can be used in disk storage RAID applications as the hot-swap switch.

Fairchild's new, rugged gate 30V P-channel product line is available in a variety of package types: SO-8, TSSOP-8, SuperSOT-3 and SuperSOT-6.

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