Product category:
Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: FRFETs
Edited by the Electronicstalk Editorial
Team on 21 June 2001
FRFETs improve diode reverse recovery
Fairchild Semiconductor has a new family of 500V fast-recovery MOSFETs designed to provide significant performance enhancements in telecomms and server power system designs.
Fairchild Semiconductor has a new family of 500V fast-recovery mosfets designed to provide significant performance enhancements in telecomms and server power system designs Compared with conventional mosfets, the new FRFETs demonstrate over 50% improvement in diode reverse recovery characteristics (Qrr, trr) and increased turn-off dv/dt immunity
This article was originally published on Electronicstalk on 28 Feb 2001 at 8.00am (UK)
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Dual-output buffer for DDR SDRAM modules
Fairchild Semiconductor has introduced a dual-output registered buffer for 184-pin, 2.5V PC200/PC266, 72bit-wide registered double data rate (DDR) SDRAM modules.
The FRFET's soft recovery characteristics result in lower system power losses, improved ruggedness and higher operating frequencies.
The FRFET technology combines a low FOM QFET topology with an electron irradiation process to achieve its fast recovery characteristics.
When applied in full-bridge phase-shift zero voltage switching (PS ZVS) topology, the FRFET's fast recovery enables a higher operating frequency (up to 250kHz).
The FRFET family is available with current ratings (Id) of 24 and 28A (TO-3P package), and 40A (TO-264).
Both 42 and 50A versions (Power247 package) are planned for later introduction.
Samples and production quantities are available now.
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