Low on-state resistance puts MOSFETs in ballasts

Fairchild Semiconductor has a new family of TO-92L-packaged N-channel MOSFETs designed to provide improved performance and lower cost than I-PAK MOSFETs in compact ballast applications.

Fairchild Semiconductor has a new family of TO-92L-packaged N-channel mosfets (using QFET technology) designed to provide improved performance and lower cost than comparable I-PAK mosfets in compact ballast applications.

The FQNL1N50B and FQNL2N50B are the first TO-92L-packaged mosfets designed specifically for the compact ballast market.

These new devices are fabricated using Fairchild's proprietary planar-stripe DMOS technology and boast a figure of merit (FOM) 40% lower than the published specifications of competitive I-PAK mosfet devices.

In the very demanding compact florescent ballast market, low FOM (RDS(on) x Qg) and low cost are the dominant design factors.

These advanced technology QFETs have been tailored to minimise on-state resistance, provide superior switching performance and withstand high-energy pulses in the avalanche and commutation modes.

The FQNL1N50B has a 500V/0.27A and RDS(on) of 9ohm; the FQNL2N50B has a 500V/0.35A and RDS(on) of 5.3ohm.

Both parts are rated at PD of 1.5W.

Samples and production quantities are available now.

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