Product category:
Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: SMPS II IGBTs
Edited by the Electronicstalk Editorial
Team on 09 October 2001
Low gate drive voltage lets IGBTs swap
for MOSFETs
Fairchild Semiconductor has released its new generation of IGBTs designed to replace 500/600V MOSFETs in switch mode power supply, power factor correction and other high-power applications.
Fairchild Semiconductor has released its new generation of IGBTs designed to replace 500/600V mosfets in switch mode power supply (SMPS), power factor correction (PFC) and other high-power applications - without redesign of the gate drive voltage circuitry The SMPS II IGBT gate drive voltage requirement has been reduced to 8-10V, similar to a mosfet, allowing larger die size power mosfets or multiple mosfets in parallel to be replaced with a single SMPS II IGBT
This article was originally published on Electronicstalk on 28 Feb 2001 at 8.00am (UK)
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The plateau voltage in the SMPS II has been reduced to ~6V making it easy to implement the IGBT as a replacement for a mosfet.
Compared with mosfets, SMPS II IGBT technology improves power density, system efficiency and reliability, and enables operation up to 150kHz without current derating.
Conduction losses are dramatically lower, especially at high temperatures, and gate charge is reduced by 80%.
SMPS II IGBTs are the first in class to have full unclamped inductive switching (UIS) capability similar to power mosfets, allowing application in all power circuit topologies, including single-switch forward convertors.
In addition, SMPS II IGBTs are available co-packaged with a fast-recovery, antiparallel Stealth diode to further enhance performance in switching power applications.
Copackaging the SMPS II IGBT with a Stealth rectifier reduces EMI, switching losses and conduction losses while reducing component count and cost.
When copackaged with the Stealth diode, SMPS II IGBTs reduce the turn-on loss by 30% compared with SMPS I IGBTs.
According to Tammy Kubasko, Business Manager for Fairchild's Power Supply business segment, "Customers have saved 22% over the cost of the 600V mosfet, reduced operating temperatures by over 25 degrees, and improved overall circuit efficiencies by 1-2% - giving the customer performance and cost benefits without compromise".
The SMPS II IGBT is available now in four die sizes, with and without antiparallel Stealth diodes, in 14 die package combinations for power supply applications from 500 to 4000W.
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