Product category:
Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: FDB045AN08A0, FDP047AN08A0 and FDD16AN08A0
Edited by the Electronicstalk Editorial
Team on 17 May 2002
MOSFETs take on automotive applications
Fairchild Semiconductor has successfully qualified its line of new medium-voltage (60-150V) UltraFET trench MOSFET technology for automotive applications.
Fairchild Semiconductor has successfully qualified its line of new medium-voltage (60-150V) UltraFET trench mosfet technology for automotive applications, according to the internationally accepted AEC Q101 standard The first in the series of these parts now being introduced are the FDB045AN08A0, FDP047AN08A0 and the FDD16AN08A0 N-channel trench mosfets covering the 75V range
This article was originally published on Electronicstalk on 28 Feb 2001 at 8.00am (UK)
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These devices are specifically designed for high-current automotive 42V applications such as starter/alternator, electronic power steering, electric braking, valve timing and DC/DC conversion.
UltraFET Trench mosfets boast the lowest RDS(on) per package type in the industry.
As more and more mechanical systems are replaced with electronics, the increase in automobile power requirements has prompted the transition from a traditional 12V to a 42V battery to limit current requirements and control wire size and cost.
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The new 75V UltraFET mosfets are designed specifically for 42V systems that will begin to appear in new car models as early as 2003.
With their very low gate charge, these medium-voltage devices are particularly well suited for high-power applications.
Typically, in many of the new automotive applications several devices must be paralleled to achieve a very low overall switch resistance.
But because of the low gate charge of UltraFET mosfets, the required drive current - and therefore the size of the drive circuitry - is limited.
For example, the FDB045AN08A0 features a total gate charge of 138nC, combined with an ultralow RDS(on) (4.5mohm maximum at room temperature in TO-263).
For inductive load switching the device has an unclamped inductive surge (UIS) capability for single and repetitive pulses (600mJ at 50A).
"The FDB045AN08A0, FDP047AN08A0, and the FDD16AN08A0 are only the first of many new UltraFET Trench mosfets we will release in the coming months", said Peter Blumenroether, Director of Marketing and Business Management for Fairchild's Discrete Power Business Unit.
"We prioritised 75V products after recognising the significant opportunity that the conversion to the 42V battery represents for silicon suppliers.
We are currently characterising our 60, 100, 150 and more 75V devices and will release them for production as soon as the characterisation is complete.
Samples of many of these devices are already available today.
The next step is to complete the qualification of our low voltage (30-40V) trench devices, which we expect to release in the third quarter of this year".
UltraFET Trench devices are developed and manufactured in Fairchild's 8in discrete power wafer fab, in Mountaintop, Pennsylvania; a manufacturing plant long recognised by industry observers for its technical leadership in power discretes for the automotive industry.
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