Product category:
Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: FDZ2551N, FDZ2553N, FDZ2552P and FDZ2554P
Edited by the Electronicstalk Editorial
Team on 31 July 2002
Dual MOSFETs shrink to protect
Fairchild Semiconductor has two new dual N-channel and two new dual P-channel 20V MOSFET BGA products with physical and electrical characteristics ideal for Li-ion battery pack protection.
Fairchild Semiconductor has two new dual N-channel and two new dual P-channel 20V mosfet BGA products with physical and electrical performance characteristics ideal for Li-ion battery pack protection applications Each of the four devices (FDZ2551N, FDZ2553N, FDZ2552P and FDZ2554P) is housed in a 4 x 2.5mm surface mount mosfet BGA package featuring a common drain connection
This article was originally published on Electronicstalk on 28 Feb 2001 at 8.00am (UK)
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BGA packaging results in a small footprint (10mm2), a very low profile (0.8mm maximum mounted height), excellent on-resistance and outstanding thermal performance, while further enhancing performance by allowing for topside heatsinking.
In addition to optimising Li-ion battery protection circuitry for size and performance, the dual N- and P-channel mosfet BGAs very effectively address the needs of other space-sensitive, performance-oriented load management applications used in computer/EDP, communication, portable, industrial equipment and wireless communication products, such as cellphone handsets, PDAs, web tablets, MP3 players, and portable POS terminals.
These 4 x 2.5mm BGA devices offer significant benefits over conventional leaded packages.
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With a profile approximately 21% lower than a TSOP-6 package, the mosfet BGAs can achieve up to 79% lower on-resistance (28 rather than 135mohm) than the most competitive dual 20V, TSOP-6 P-channel mosfet.
They also provide 80% lower on-resistance (14 compared with 69mohm) than the best competitive dual 20V, TSOP-6 N-channel mosfet on the market today! In addition to the lower absolute on-resistance values, the dual mosfet BGAs also boast a lower FFOM (footprint figure of merit, defined as on-resistance times footprint area) than any other TSOP-6 package or micro lead frame package, such as the PowerPAKTM 1212-8.
"The common drain connection offered by this series of dual mosfet BGA products make them particularly easy to implement in battery pack protection circuits", said Steve Ahrens, Director of Fairchild Discrete Power Business Development and Communications.
"Without the need for additional external package connections, BGAs save space and eliminate additional mounting costs".
Fairchild is the only manufacturer in full volume production of mosfet BGAs, including a full line of single- and dual-packaged, N-channel and P-channel devices.
The FDZ2551N, FDZ2553N, FDZ2552P and FDZ2554P are available in tape-and-reel packaging.
Samples and production quantities are available now, with lead times of 8 weeks or more for larger orders.
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