Stripe structure boosts MOSFET merits

Seven new high-voltage planar MOSFETs from Fairchild Semiconductor offer lower on-resistance, lower gate charge and higher energy density in avalanche and commutation modes.

Seven new high-voltage planar mosfets from Fairchild Semiconductor offer lower on-resistance, lower gate charge and higher energy density in avalanche and commutation modes.

Designed specifically to meet the performance requirements of advanced switch-mode power supplies (SMPSs) and DC/DC convertors, the products' advanced stripe structure technology and smaller packaging benefit power systems by providing reduced power loss, higher system efficiency and stable system quality.

Fairchild's TO-220 packaged 500V FQP18N50V2, for example, has a figure-of-merit (FOM) over 21% lower than the leading competitor's similarly packaged product.

In addition, the 200V FQD18N20V2, housed in a D-PAK, has an FOM (RDS(ON) x Qg) that is over 39% lower that of the leading competitor's comparably packaged device.

This lower FOM results in optimum performance in switch mode applications.

A total of seven new products are available: three 500V devices aimed at switch mode power supply (SMPS) and power factor correction (PFC) applications, and four 200V parts for DC/DC convertor applications.

The 200V products are also well suited for switching and pulsewidth control applications.

Fairchild's advanced technology planar mosfet stripe structure and higher active cell density achieves lower on-state resistance, lower switching loss, and lower effective output capacitance.

This new technology implements both a compensation area between the p-wells that improves on-resistance and a self-aligning process that increases cell density and stability.

Samples and production quantities are available now, with lead times of 12 weeks or more for larger orders.

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