Product category:
Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: C-Series and V2 Series MOSFETs
Edited by the Electronicstalk Editorial
Team on 16 July 2003
Planar MOSFETs show their merits
A new range of QFET planar MOSFETs uses advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, power factor correctio
A new range of QFET planar mosfets uses advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, power factor correction, DC/DC convertors, plasma display panels (PDP), lighting ballasts and motion control These new C-Series (FQxxNxxC) and V2 Series (FQxxNxxV2) mosfets offer reduced on-state loss by lowering on-resistance and reduced switching loss by lowering gate charge and output capacitance; benefits that result from combining Fairchild's proprietary DMOS and advanced planar stripe structure technologies
This article was originally published on Electronicstalk on 28 Feb 2001 at 8.00am (UK)
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By using advanced QFET process technology, Fairchild can offer a 25% improved figure of merit over competing planar mosfet devices.
According to Joon Rhee, Fairchild's Marketing Director, "These advanced QFET planar mosfets offer lower on resistance, lower gate charge, and higher avalanche energy density in the avalanche and commutation modes than previously available.
In addition", said Rhee, "the lower effective output capacitance of the advanced QFET mosfets will not only simplify circuit designs for hard switching of power supplies, but will also simplify circuit design for resonant mode switching of server/telecom power management, PDP power management, and UPS applications".
For cost effectiveness, the new QFET series products are available in standard surface-mount and through-hole type packages (TO-92, TO-92L, TO-126).
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